Research of Innovative Material and Process for Creation of Next-generation Electronics Devices

Outline

This Research Area aims at transcending saturation of technology evolution based on a semiconductor Roadmap strategy. It covers research on material, structure, and process development for creating innovative and viable electronics devices that have novel function and high performance that can not be realized merely by the scaling paradigm. Specifically, candidate subjects include: research for highly integrated information processing devices with a novel principle that can solve practical issues, such as increased power consumption and inflation of manufacturing cost; research for devices demonstrating novel function and high performance by the fusion of various technologies or materials including organic substances; process research that enables the above; or research exploiting a novel application thereof. This Research Area promotes research that is expected to engender practical technologies, rather than investigation of properties and mechanisms of materials and processes.

Strategic Sector

Exploitation of Materials and Nanoprocesses for the Realization of Novel Electronic Devices with Novel Concepts, Novel Functions and Novel Structures

Research Projects

Year Started : 2009
Research Director	Affiliation	Research Project
Kenji Ohmori	Associate Professor, University of Tsukuba	Development of guiding principles for controlling fluctuations in nanoelectronic devices through the picosecond-scope physical analyses
Susumu Okada	Associate Professor, University of Tsukuba	Design and study of graphite devices based on computational science
Shoji Kamiya	Professor, Nagoya Institute of Technology	Development of local evaluation method for the mechanical strength of high density multi-layer wiring and three dimensional stacking structures
Takashi Kimura	Professor, Kyushu University	Development of ultra-high speed nano spin devices using a three-dimensional injection technique of charge-less spin currents
Tsuyoshi Hasegawa	Principal Investigator, National Institute for Materials Science	Development of the three-terminal nonvolatile device 'Atom Transistor'
Nobuya Mori	Associate Professor, Osaka University	Development of integrated simulators from atomistic theory to compact model
Shinji Yuasa	Director,National Institute of Advanced Industrial Science and Technology (AIST)	Development of metal/oxide hybrid devices by novel deposition processes

Year Started : 2008
Research Director	Affiliation	Research Project
Tetsuo Endoh	Professor, Tohoku University	Research and Development of Vertical Body Channel MOSFET andIts Integration Process
Hiroo Kinoshita	Professor, University of Hyogo	Development of Ultra-Fine Structure Metrology System using Coherent EUV Source
Akira Toriumi	Professor, The University of Tokyo	Understanding and Control of Solid-State Interfaces for Ge-CMOS with High-K Gate Dielectric Film
Sadamichi Maekawa	Director,Japan Atomic Energy Agency (JAEA)	Development of Novel Materials and Functions Based on Numerical Simulations
Shinji Matsui	Professor, University of Hyogo	Research and Development on Process Science and CD Control in High-Throughput Nanoimprint

Year Started : 2007
Research Director	Affiliation	Research Project
Hiro Akinaga	Director, National Institute of Advanced Industrial Science and Technology (AIST)	Research of Functional-oxides and Development of Interface-Phase-Change Switching Devices
Taiichi Otsuji	Professor, Tohoku University	Development of Graphene-on-Silicon Material/Device Technologies
Takatomo Sasaki	Specially Appointed Professor, Osaka University	Development of Nonlinear Optical Crystal for Vacuum UV Laser
Satoshi Sugahara	Associate Professor, Tokyo Institue of Technology	Spin-Based Functional MOSFET Devices Using Half-Metallic Ferromagnet
Seiichi Tagawa	Specially Appointed Professor, Osaka University	Study on Resist Materials for Nanofabrication and Development of Process Simulator
Mizuhisa Nihei	Fujitsu Limited	Three-dimensional Carbon Active Interconnects for LSI

Research Area Website: http://www.nexteled.jst.go.jp/index-e.html