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Understanding and Control of Solid-State Interfaces for Ge-CMOS with High-K Gate Dielectric Film

Research Project Outline

Ge-based devices with high electron and hole mobilities are expected for the next generation CMOS which will enable us to achieve high driving performance with a low voltage opera-tion. It is, however, well known that Ge interfaces with dielec-tric fi lms or metals are thermally or electrically unstable, so it is strongly demanded to control them based on the understand-ing of inherent origins behind them. This research program is to elaborately study those interfaces and to develop revolution-ary methods for designing high-quality interfaces.

Research Director
Professor, The University of Tokyo
Research Started
Research Area
Research of Innovative Material and Process for Creation of Next-generation Electronics Devices
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