Development of the three-terminal nonvolatile device 'Atom Transistor'

Research Project Outline

Three-terminal nonvolatile device 'Atom Transistor', where the source and drain electrodes are electrically connected by metal atoms (ions) supplied from the gate electrode to achieve high ON/OFF ratio, will be developed. New functional devices based on Atom Transistor will be also developed.

Research Director
HasegawaTsuyoshi
Affiliation
Principal Investigator, National Institute for Materials Science
Research Started
2009
Status
ongoing
Research Area
Research of Innovative Material and Process for Creation of Next-generation Electronics Devices
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