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Research and Development of Vertical Body Channel MOSFET andIts Integration Process

Research Project Outline

The device technology of a vertical body channel MOSFET with a new concept that assumes the entire body area of the device to be its current drive area is developed. The circuit technology and material/process technology for the vertical body channel MOSFET are developed.It aims to offer a new universal technological platform for semiconductor LSI to improve the driving current characteris-tic, the leak current characteristic, and the integration density in comparison with conventional planar type MOSFET.

Research Director
TetsuoEndoh
Affiliation
Professor, Tohoku University
Research Started
2008
Status
ongoing
Research Area
Research of Innovative Material and Process for Creation of Next-generation Electronics Devices
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