Research Project Outline
A new metrology system has been developed that is based on X-ray diffraction microscopy in the EUV region and is ca-pable of measuring CD value and inspecting pattern defects with a high accuracy. The integration of a coherent EUV source employing a high-harmonic laser system and EUV scattero-metric microscopy has enabled the construction of a practical system for CD measurement and the inspection pattern defects with subnanometer accuracy.