Spin-Based Functional MOSFET Devices Using Half-Metallic Ferromagnet

Research Project Outline

In order to establish a new class of silicon integrated electronics employing spin degrees of freedom, we develop MOSFETbased functional spin-transistors using a half-metallic ferromagnet (HMF) for the source/drain (referred to as spin- MOSFETs), and hybrid devices using a MOSFET and magnetic tunnel junction with HMF electrodes (referred to as pseudo-spin-MOSFETs). Novel CMOS logic architectures based on these functional devices, such as nonvolatile logic and reconfigurable logic, are also explored.