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Spin-Based Functional MOSFET Devices Using Half-Metallic Ferromagnet

Research Project Outline

In order to establish a new class of silicon integrated electronics employing spin degrees of freedom, we develop MOSFETbased functional spin-transistors using a half-metallic ferromagnet (HMF) for the source/drain (referred to as spin- MOSFETs), and hybrid devices using a MOSFET and magnetic tunnel junction with HMF electrodes (referred to as pseudo-spin-MOSFETs). Novel CMOS logic architectures based on these functional devices, such as nonvolatile logic and reconfigurable logic, are also explored.

Research Director
Associate Professor, Tokyo Institue of Technology
Research Started
Research Area
Research of Innovative Material and Process for Creation of Next-generation Electronics Devices
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