R&D Areas

Semiconductor Area

Program Officer (PO)

KURODA Tadahiro

KURODA Tadahiro

(University Professor, Office of University Professor, The University of Tokyo / Chancellor, Prefectural University of Kumamoto)

Deputy Program Officer (Deputy PO)

TAKENAKA Mitsuru

TAKENAKA Mitsuru

(Professor, Graduate School of Engineering, The University of Tokyo)

Overview

In this technology area, we aim to radically reduce power consumption of semiconductors for information and communication infrastructure. Specifically, we aim to develop semiconductor device and process technologies for ultra-low power logic and memory, innovative transmission hardware technologies that reduce power consumption per communication bit by several orders of magnitude, and materials and implementation methods that achieve highly efficient thermal management. We will also develop highly efficient and reliable power conversion and control circuits, inverter/converter stabilization technology, and other technologies to improve the energy efficiency and reliability of large-scale, complex power grids

R&D Projects

Small Phase

<Adopted in FY2023> R&D Project Title Summary R&D Period
Creation of ultra-wideband virtual impedance circuit for highly reliable and high-power density power converter
ITOH Junichi
(PDF:469KB) FY2023-FY2026
Sense & Drive IC for Energy-Saving of Power Devices
TAKAMIYA Makoto
(PDF:666KB) FY2023-FY2026
3DIC thermal management based on phonon engineering
NOMURA Masahiro
(PDF:668KB) FY2023-FY2026
Performance Balance Engineering for Hetero-integrate 3D CFET SRAM
MAEDA Tatsuro
(PDF:1.09MB) FY2023-FY2026
Spin-functional optoelectronic interface using 0-2D hybrid semiconductors
MURAYAMA Akihiro
(PDF:545KB) FY2023-FY2026
<Adopted in FY2024> R&D Project Title Summary R&D Period
Development of SiC epitaxial layer growth technology for ultra-high voltage power devices
UJIHARA Toru
(PDF:206KB) FY2024-FY2027
Development of 3D IC Cooling Technology with Ultra-High Thermal Conductivity µLHP Integration
Nagano Hosei
(PDF:274KB) FY2024-FY2027
UP-SiC: Unlocking the Future Potential of Silicon Carbide in Power Electronics *
KIMOTO Tsunenobu
(PDF:602KB) FY2024-FY2027
Heterogeneous Material Integrated MEMS/NEMS-Photonics Platform for Secure Communication (HetMEPS) *
NISHIYAMA Nobuhiko
(PDF:335KB) FY2024-FY2027

*These projects promote collaborative R&D with UK.

Feasibility Study (FS)

<Adopted in FY2024> R&D Project Title R&D Period
Development of high performance heat conduction sheets by electric field alignment with rotating electrodes
INABA Masafumi
FY2024-FY2025
The creation of novel zero-energy-consumption terahertz detector based on the 2D plasmon rectification
TANG Chao
FY2024-FY2025

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Area Advisor (AD)

KANAYAMA Toshihiko Special Emeritus Advisor, National Institute of Advanced Industrial Science and Technology
SHIMIZU Toshihisa Specially Appointed Professor, Professor Emeritus, Tokyo Metropolitan University
TAKAGI Shinichi Professor, Faculty of Engineering, The University of Tokyo
TAKAHASHI Ryo Chief Senior Researcher, Network Research Institute, National Institute of Information and Communication Technology
DEGUCHI Jun Group Manager, Frontier Technology R&D Institute, KIOXIA Corporation
TORIUMI Akira Emeritus Professor, The University of Tokyo
NISHI Hiroaki Professor, Faculty of Science and Technology, Keio University
FUJITA Masayuki Professor, College of Engineering, Kanazawa Institute of Technology
YAMAOKA Masanao Department Manager, Research & Development Group, Hitachi, Ltd.
YUKITA Kazuto Chief Professor, Eco-Electric Research Center, Aichi Institute of Technology