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Home > Researchers & Research Theme > Katsuhiro TOMIOKA
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2009 Researchers
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Control of Si/III-V super-heterointerface and development of nanowire-based tunneling FETs
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Research Site JST PRESTO Research Fellow , Graduate School of Information Science and Technology, Hokkaido University | |
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Conventional MOSFETs have theoritical limit in subthreshold characteristic (SS) resulting from carrier diffusion (SS > 60 mV/dec). The goal of this project to fabricate steep-slope nanowire-based FET by controlling Si/III-V heterojunctions without misfit dislocations, which can be achieved with nano-heteroepitaxial methods.
