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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2009 Researchers

Hideo KAIJU Hiroshi KUMIGASHIRA Yasushi TAKAHASHI
Katsuhiro TOMIOKA Koji NAKANO Hiroyuki NAKAMURA
Jiro NISHINAGA Yutaka NOGUCHI Suguru NODA
Masataka HIGASHIWAKI Tomoki MACHIDA Hiroshi YAMAMOTO

Creation of novel high-performance non-volatile memory using spin quantum cross devices

photo Hiroshi KUMIGASHIRA
Research Site
Professor, Photon Factory, Institute of Materials Structure Science (IMSS), High Energy Accelerator Research Organization (KEK)
Research Results
Utilizing the nano-capacitor structures formed at the interface between Al metals and transition metal oxides through the redox reaction, we develop the environmentally-friendly nonvolatile resistance-switching memory. The distinctive feature of the memory is that the memory consists only of materials with high Clark number. We establish the fabrication process for the memory, and realize the environmentally-friendly memory with high device performance using the sophisticated oxide-growth technique and synchrotron radiation analysis.



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