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Materials and processes for innovative next-generation devices
Researchers & Research Theme
Phase I Phase II Phase III

2009 Researchers

Hideo KAIJU Hiroshi KUMIGASHIRA Yasushi TAKAHASHI
Katsuhiro TOMIOKA Koji NAKANO Hiroyuki NAKAMURA
Jiro NISHINAGA Yutaka NOGUCHI Suguru NODA
Masataka HIGASHIWAKI Tomoki MACHIDA Hiroshi YAMAMOTO

New devices using fullerene / III-V compound semiconductor heterostructures

photo Jiro NISHINAGA
Research Site
Associate Professor, Faculty of Science and Engineering, Waseda University
Research Results
Fullerene C60 molecules crystallize into a fcc structure on crystalline substrates. However, C60 crystals are very fragile and chemically unstable due to the weak binding energy, and applying C60 crystals to practical devices is very difficult. The motivation of this research is to grow C60 / III-V compound semiconductors heterostructures by using molecular beam epitaxy (MBE) which is the most used technique for the analysis of epitaxial growth process. We have concentrated on the study of characteristics of C60 epitaxial growth and the development of new devices using C60 molecules such as solar cells and memory devices.



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