According to the development of the information society, higher integration and lower power consumption of memory devices have been required. In order to satisfy this demand, the creation of unprecedented innovative devices is needed. In this study, we have proposed ferromagnetic metal/organic molecules/ferromagnetic metals where the organic molecules are sandwiched between the two edges of the ferromagnetic thin metals, and set the goal at the creation of novel non-volatile memory devices with high resistance ratio and low current density.