[Shinichi Takagi] Development of Tunneling MOSFET Technologies for Integrated Circuits with Ultra-Low Power Consumption

Research Director

Shinichi Takagi
The University of Tokyo
Professor

Outline

We develop band-to-band tunneling FET technologies allowing to operate at supply voltage much lower than that in the conventional CMOS and to significantly reduce the power consumption of integrated circuits. Band-to-band tunneling FET is a novel device, where gate voltage controls the drive current due to tunneling. In this research project, we will develop practical technologies of high performance tunneling FET devices and will establish the design and circuit technology of tunneling FETs, aiming at realizing extremely-low power consumption system which can operate at supply voltage lower than 0.3 V.

Collaborators

Masato Koyama	Senior Manager, Corporate R&D Center, Toshiba Corporation
Taketsugu Yamamoto	IT-Related Chemicals Research Laboratory, Sumitomo Chemical Corporation
Manabu Mitsuhara	Senior Research Engineer, NTT Device Technology Labs., NTT Corporation