| paper |
[5] J. Nishinaga, Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", J. Vac. Sci. Technol. B, 30, 02B116, 2012. |
[4] J. Nishinaga and Y. Horikoshi, "Growth and characterization of C60/GaAs interfaces and C60 doped GaAs", J. Cryst. Growth, 323, 135-139, 2011. |
[3] J. Nishinaga and Y. Horikoshi, "Growth and Characterization of C60/GaAs Interfaces and C60 doped GaAs", Journal of The Surface Science Society of Japan 31, 632-636, 2010 (Japanese, 2010/12/...). |
[2] J. Nishinaga, T. Hayashi, K. Hishida, and Y. Horikoshi, "Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE", Physica Status Solidi (c), 7, 2486-2489, 2010. |
[1] J. Nishinaga, T. Hayashi, K. Hishida, and Y. Horikoshi, "Structural properties of C60-multivalent metal composite layers grown by MBE", Journal of Vacuum Science and Technology B, 28, C3E10-C3E13, 2010. |
| presentation |
[16] J. Nishinaga, Y. Horikoshi, "Optical characteristics of C60 doped GaAs layers grown by MEE", The 73st Fall Meeting, 2012, The Japan Society of Applied Physics (Japanese, 2012/9/11). |
[15] J. Nishinaga, Y. Horikoshi, "Crystalline characteristics of fullerene doped GaAs layers grown by MBE", 43th Fullerenes-Nanotubes-Graphene General Symposium (Japanese, 2012/9/5). |
[14] J. Nishinaga, Y. Horikoshi, "Electrical characteristics of C60, Si codoped GaAs layers grown by MEE", 31th Electronic Materials Symposium (Japanese, 2012/7/11). |
[13] J. Nishinaga, Y. Horikoshi, "Electrical characteristics of C60 doped GaAs grown by MBE", The 59th Spring Meeting, 2012, The Japan Society of Applied Physics (Japanese, 2012/3/15). |
[12] J. Nishinaga, Y. Horikoshi, "Electrical characteristics of C60 doped GaAs layers grown by MEE", 17th International Conference on Molecular Beam Epitaxy, Nara, Japan (2012/9/24). |
[11] J. Nishinaga, Y. Horikoshi, "Crystalline characteristics of C60 doped GaAs", 35th summer school on crystal growth (Japanese, 2011/9/7). |
[10] J. Nishinaga, Y. Horikoshi, "Crystalline and electrical characteristics of C60, Si codoped GaAs layers", The 71st Fall Meeting, 2010, The Japan Society of Applied Physics (Japanese, 2011/8/29). |
[9] J. Nishinaga. Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", 30th Electronic Materials Symposium (Japanese, 2011/6/29). |
[8] J. Nishinaga, Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", 28th North American Molecular Beam Epitaxy (2011/8/15). |
[7] J. Nishinaga and Y. Horikoshi, "Photocurrent spectra of C60 and Si codoped GaAs layers", The 58th Spring Meeting, 2011, The Japan Society of Applied Physics (2011/3/24). |
[6] J. Nishinaga, K. Hishida, K. Onomitsu, and Y. Horikoshi, "Superlattice Solar-cell using by excitons absorption", The 71st Fall Meeting, 2010, The Japan Society of Applied Physics (Japanese, 2010/9/15). |
[5] J. Nishinaga and Y. Horikoshi, "Electrical properties of C60 -doped GaAs, AlGaAs layers", The 71st Fall Meeting, 2010, The Japan Society of Applied Physics (Japanese, 2010/9/14). |
[4] J. Nishinaga and Y. Horikoshi, "Electrical properties of C60 delta-doped GaAs layers grown by MBE", 29th Electronic Materials Symposium, Shuzenji, Japan (Japanese, 2010/7/15). |
[3] T. Hayashi, J. Nishinaga, and Y. Horikoshi, "Organic thin-film solar cells using C60･Ge composite layers", The 57th Spring Meeting, 2010, The Japan Society of Applied Physics (Japanese, 2010/3/19) |
[2] J. Nishinaga, K. Hishida, and Y. Horikoshi, "Electrical properties of C60 delta-doped Be-GaAs", The 57th Spring Meeting, 2010, The Japan Society of Applied Physics (Japanese, 2010/3/18) |
[1] J. Nishinaga, and Y. Horikoshi, "C60 epitaxial growth on GaAs substrates", The Research Project of the Computer Center at Gakushuin University : The 4th Workshop of Mathematical Science of Crystal Growth (Japanese, 2009/12/26) |
| invited speech |
[5] J. Nishinaga, "Electronic band structures of fullerene / GaAs heterointerfaces and their applications", 2013 Energy Materials Nanotechnology Meeting, Houston, USA (2013/1/7). |
[4] J. Nishinaga, "Crystal growth and structural characteristics of fullerene / GaAs interfaces", Collaborative Conference on Crystal Growth (3CG), Orlando, USA (2012/12/11). |
[3] J. Nishinaga, "Crystal Growth of fullerene/GaAs interfaces and their applications", 2012 Energy Materials Nanotechnology Meeting, Orlando, USA (2012/4/16). |
[2] J. Nishinaga, "Electrical properties of C60 delta-doped GaAs, AlGaAs layers", Villa Conference on Interactions among Nanostructures (2011/4/21). |
[1] J. Nishinaga, "Growth and characterization of C60/GaAs interfaces and C60 doped GaAs", 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany (2010/8/23). |
| publications |
[2] J. Nishinaga, "Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs and AlGaAs layers", Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production, Elsevier. |
[1] J. Nishinaga and Y. Horikoshi, "Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs layers", Crystal Growth: Theory, Mechanism, and Morphology, Nova Science Publishers. |
| patent |
[1] |
| press |
[1] |
Jiro NISHINAGA
