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Materials and processes for innovative next-generation devices
Research Results
Phase I Phase II Phase III

2009 Researchers

Hideo KAIJU Hiroshi KUMIGASHIRA Yasushi TAKAHASHI
Katsuhiro TOMIOKA Koji NAKANO Hiroyuki NAKAMURA
Jiro NISHINAGA Yutaka NOGUCHI Suguru NODA
Masataka HIGASHIWAKI Tomoki MACHIDA Hiroshi YAMAMOTO

Hiroyuki NAKAMURA

paper
[3] H. Nakamura, T. Koga, and T. Kimura, "Experimental Evidence of Cubic Rashba Effect in an Inversion-Symmetric Oxide", Phys. Rev. Lett. 108, 206601 (2012).
[2] D. Sekiya, H. Nakamura, and T. Kimura, "Enhanced Carrier Injection in Perovskite Field-Effect Transistors via Low-Barrier Contacts", Appl. Phys. Express, 4, 064103 (2011).
[1] H. Nakamura and T. Kimura, "Threshold electric fields controlled by surface treatments in KTaO3 field-effect transistors", J. Appl. Phys, 107, 074508 (2010).
presentation
[4] H. Nakamura, D. Sekiya, T. Koga, and T. Kimura, "Phase coherence and localization effect in gated KTaO3", Workshop on Oxide Electronics (WOE 18), Napa, USA (2011/9/27).
[3] H. Nakamura and T. Kimura, "Strong spin-orbit coupling and its manipulation in KTaO3 field-effect transistors", 11th Korea-Japan-Taiwan Symposium on Strongly Correlated Electron System, Jeju Korea (2011/2/10).
[2] H. Nakamura and T. Kimura, "Antilocalization in KTaO3 induced by gate electric field", International Conference on Core Research and Engineering Science of Advanced Materials, Suita Japan (2010/5/30).
[1] H. Nakamura and T. Kimura, "Electric field control of spin precession in KTaO3 field-effect transistor", American Physical Society, March meeting, Portland USA (2010/3/17).
invited speech
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publications
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patent
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press
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