| 論文 |
[5] J. Nishinaga, Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", J. Vac. Sci. Technol. B, 30, 02B116, 2012. |
[4] J. Nishinaga and Y. Horikoshi, "Growth and characterization of C60/GaAs interfaces and C60 doped GaAs", J. Cryst. Growth, 323, 135-139, 2011. |
[3] 西永慈郎、堀越佳治, "GaAs基板上フラーレンC60の結晶成長とC60 doped GaAsの電気的特性", 表面科学, 31, 632-636, 2010. |
[2] J. Nishinaga, T. Hayashi, K. Hishida, and Y. Horikoshi, "Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE", Physica Status Solidi (c), 7, 2486-2489, 2010. |
[1] J. Nishinaga, T. Hayashi, K. Hishida, and Y. Horikoshi, "Structural properties of C60-multivalent metal composite layers grown by MBE", Journal of Vacuum Science and Technology B, 28, C3E10-C3E13, 2010. |
| 学会 |
[16] 西永慈郎、堀越佳治, "フラーレン添加GaAs薄膜の光学的特性", 第73回応用物理学会学術講演会 (2012/9/11). |
[15] 西永慈郎、堀越佳治, "フラーレン添加GaAs薄膜の結晶学的特性", 第43回フラーレン・ナノチューブ・グラフェン総合シンポジウム (2012/9/5). |
[14] 西永慈郎、堀越佳治, "Electrical characteristics of C60, Si codoped GaAs layers grown by MEE", 第31回電子材料シンポジウム (2012/7/11). |
[13] 西永慈郎、堀越佳治, "フラーレン添加GaAs薄膜の電気的特性", 第59回応用物理学関係連合講演会 (2012/3/15). |
[12] J. Nishinaga, Y. Horikoshi, "Electrical characteristics of C60 doped GaAs layers grown by MEE", 17th International Conference on Molecular Beam Epitaxy, Nara, Japan (2012/9/24). |
[11] 西永慈郎、堀越佳治, "C60添加GaAs結晶の欠陥について", 第35回結晶成長討論会 (2011/9/7). |
[10] 西永慈郎、堀越佳治, "C60, Si codoped GaAs薄膜の結晶学的・電気的特性", 第72回応用物理学会学術講演会 (2011/8/29). |
[9] J. Nishinaga. Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", 第３０回電子材料シンポジウム (2011/6/29). |
[8] J. Nishinaga, Y. Horikoshi, "Electrical properties of C60 and Si codoped GaAs layers", 28th North American Molecular Beam Epitaxy (2011/8/15). |
[7] 西永慈郎、堀越佳治, "C60, Si codoped GaAsの光電流スペクトル", 第５８回応用物理学関係連合講演会 (2011/3/24). |
[6] 西永慈郎、菱田清、小野満恒二、堀越佳治, "太陽電池における励起子吸収について", 第７１回応用物理学会学術講演会 (2010/9/15). |
[5] 西永慈郎、堀越佳治, "C60 doped GaAs, AlGaAsのトラップ準位", 第７１回応用物理学会学術講演会 (2010/9/14). |
[4] 西永慈郎、堀越佳治, "Electrical properties of C60 delta-doped GaAs layers grown by MBE", 第２９回電子材料シンポジウム、修善寺 (2010/7/15). |
[3] 林剛史、西永慈郎、堀越佳治、「C60・Ge複合体薄膜を用いた有機薄膜太陽電池」、第５７回応用物理学関係連合講演会、東海大学（２０１０年３月１９日） |
[2] 西永慈郎、菱田清、堀越佳治、「C60 delta-doped Be-GaAsの電気的特性」、第５７回応用物理学関係連合講演会、東海大学（２０１０年３月１８日） |
[1] 西永慈郎、堀越佳治、「GaAs基板上フラーレンC60の核形成」、計算機センター特別研究プロジェクト「結晶成長の数理」第４回研究会（２００９年１２月２６日） |
| 招待講演 |
[5] J. Nishinaga, "Electronic band structures of fullerene / GaAs heterointerfaces and their applications", 2013 Energy Materials Nanotechnology Meeting, Houston, USA (2013/1/7). |
[4] J. Nishinaga, "Crystal growth and structural characteristics of fullerene / GaAs interfaces", Collaborative Conference on Crystal Growth (3CG), Orlando, USA (2012/12/11). |
[3] J. Nishinaga, "Crystal Growth of fullerene/GaAs interfaces and their applications", 2012 Energy Materials Nanotechnology Meeting, Orlando, USA (2012/4/16). |
[2] J. Nishinaga, "Electrical properties of C60 delta-doped GaAs, AlGaAs layers", Villa Conference on Interactions among Nanostructures (2011/4/21). |
[1] J. Nishinaga, "Growth and characterization of C60/GaAs interfaces and C60 doped GaAs", 16th International Conference on Molecular Beam Epitaxy, Berlin, Germany (2010/8/23). |
| 出版物 |
[2] J. Nishinaga, "Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs and AlGaAs layers", Molecular Beam Epitaxy: From Quantum Wells to Quantum Dots, From Research to Mass Production, Elsevier. |
[1] J. Nishinaga and Y. Horikoshi, "Growth and characterization of fullerene/GaAs interfaces and C60 doped GaAs layers", Crystal Growth: Theory, Mechanism, and Morphology, Nova Science Publishers. |
| 特許 |
[1] |
| プレス発表 |
[1] |
西永 慈郎
