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Materials and processes for innovative next-generation devices
Research Results
Phase I Phase II Phase III

2008 Researchers

Ryuji KATAYAMA Iwao KAWAYAMA Yoshihiro KANGAWA
Wataru KOBAYASHI Tomofumi SUSAKI Mitsuru TAKENAKA
Toshihiro NAKAOKA Kohei HAMAYA Tomoteru FUKUMURA
Norikazu MIZUOCHI    

Ryuji KATAYAMA

paper
[2] R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, S. Kurokawa, N. Fujii and T. Matsuoka, "Optical properties of the periodic polarity-inverted GaN waveguides", Proc. of SPIE 826814 (2012).
[1] Y. Fukuhara, R. Katayama and K. Onabe, "Lateral patterning of GaN polarity using wet etching process", phys.stat.sol. (c) 7 (7-8), 1922-1924 (2010).
presentation
[16] 片山竜二, "極性窒化物半導体ナノ構造による量子もつれ光子対発生と量子暗号通信応用", 量子ICTフォーラム,情報通信研究機構(NICT)(Japanese, 2012/10/19).
[15] R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe and T. Matsuoka, "Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides", The 17th International Conference on Molecular Beam Epitaxy (MBE2012), September 23-28, 2012,Nara, Japan.
[14] R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka, "Enhanced second harmonic generation from periodic polarity-inverted GaN waveguide", International Conference on superlattices, nanostructures, and Nanodevices, July 22-27, 2012, Dresden, Germany.
[13] R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka, "Linear and nonlinear optical investigations of periodic polarity-inverted GaN waveguides", 4th International Symposium on Growth of III-Nitrides (ISGN4) Jyly 16-19, 2012, St. Petersburg, Russia.
[12] R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T. Matsuoka, "Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide", The 31st Electronic Materials Symposium, July 11-13, 2012, Shuzenji, Japan.
[11] 片山 竜二,松岡 隆志,福原 裕次郎,角田 雅弘,窪谷 茂幸,尾鍋 研太郎, "極性ワイドギャップ半導体フォトニックナノ構造の新規光機能", 2012年春季 第59回応用物理学関係連合講演会 シンポジウム 「ポストスケーリング時代おける次世代革新的デバイスおよび材料の探索」,早稲田大学 (Japanese, 2012/3/15).
[10] R. Katayama, N. Fujii, Y. Fukuhara, K. Onabe, Y. Liu and T. Matsuoka, "Piezoelectric and Kelvin force microscopic studies on microstructure of periodic polarity-inverted GaN structures on N-polar GaN template", 16th International Conference on Molecular Beam Epitaxy (MBE 2010), August 22-27, 2010, Berlin, Germany.
[9] R. Katayama, N. Fujii, Y. Fukuhara, K. Onabe, Y.H. Liu and T. Matsuoka, "Piezoelectric and Kelvin force microscopic studies on microstructure of periodic polarity-inverted GaN structures on N-polar GaN template", The 29th Electronic Materials Symposium (EMS 29), July 14-16, 2010, Shuzenji, Japan.
[8] 福原 裕次郎,大原 佑騎,片山 竜二,尾鍋 研太郎, "N極性GaNテンプレート上におけるGaN周期極性反転構造の作製", 2010年春季 第57回応用物理学関係連合講演会,東海大学 (Japanese, 2010/3/17-20).
[7] 片山 竜二,福原 裕次郎,藤井 直人,尾鍋 研太郎, "変調分光法を用いた極性反転GaNヘテロ構造の極性分布評価", 2009年秋季 第70回応用物理学会学術講演会,富山大学 (Japanese, 2009/9/8-11).
[6] 福原 裕次郎,片山 竜二,尾鍋 研太郎, "ケルビン力顕微鏡によるGaN格子極性反転構造の極性判定", 2009年秋季 第70回応用物理学会学術講演会,富山大学 (Japanese, 2009/9/8-11).
[5] Y. Fukuhara, R. Katayama and K. Onabe, "Fabrication of lattice-polarity-inverted GaN structures by wet processing: strain characterization", The 28th Electronic Materials Symposium (EMS 28), July 8-10, 2009, Moriyama, Japan.
[4] 福原 裕次郎,片山 竜二,尾鍋 研太郎, "ウェットプロセスを用いたGaN格子極性反転構造の作製 (2) : 歪の評価", 2009年春季 第56回応用物理学関係連合講演会,筑波大学 (Japanese, 2009/3/30-4/2).
[3] 福原 裕次郎,片山 竜二,尾鍋 研太郎, "ウェットプロセスを用いたGaN 格子極性反転構造の作製", 応用物理学会結晶工学分科会年末講演会,学習院創立百周年記念会館 (Japanese, 2008/12/11).
[2] R. Katayama, Y. Fukuhara, 久家祥宏、T. Kondo, and K. Onabe, "Fabrication of llatice polarity inverted GaN heterostructures by MBE", The 56th spring meeting, 2009, The Japan Society of Applied Physics and Related Societies, Tsukuba University. (Japanese, 2009/3/30)
[1] Y. Fukuhara, R. Katayama, and K. Onabe, "Fabrication of lattice polarity inverted GaN heterostructures using wet etching", Year-end meeting of division of crystal science and technology, the japan society of applied physics, Gakushuin University. (Japanese, 2008/12/11)
invited speech
[4] R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada, and T. Matsuoka, "Violet second harmonic generation from polarity-inverted GaN waveguides", International Workshop on Nitride Semiconductors (IWN2012), Oct. 14-19, 2012, Sapporo, Japan.
[3] R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, S. Kurokawa, N. Fujii and T. Matsuoka, "Optical properties of the periodic polarity-inverted GaN waveguides", SPIE conference 2012, Quantum Sensing and Nanophotonic Devices VIII, January 21-26, 2012, San Fransisco, California, USA.
[2] 片山 竜二,福原 裕次郎,近藤 高志,尾鍋 研太郎, "MBE法を用いたGaN格子極性反転構造の作製", 2009年春季 第56回応用物理学関係連合講演会シンポジウム「不透明な時代を切り拓く分極反転光デバイス」,筑波大学 (Japanese, 2009/3/30).
[1] 片山 竜二, "高次光学効果発現を目指したワイドギャップ半導体ナノ構造の作製", 第38回結晶成長国内会議,仙台市戦災復興記念館 (Japanese, 2008/11/4-6).
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