Taiki Inoue

Chemical vapor deposition-based fabrication of atimic layer materials devices

Grant No.：JPMJPR24H1

Researcher

Taiki Inoue

Outline

Atomic layer materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides are expected as builiding blocks of next-generation semiconductor devices. In this research project, I aim to establish a new fabrication strategy for atomic layer material devices by integrating conventional semiconductor processes with advanced material synthesis techniques such as heterolayer growth, growth and etching rate control, and nucleation control in chemical vapor deposition of atomic layer materials.

Mengnan Ke

Developing a Technological Basis for Next-Generation Material Devices in 3D Integrated CFET

Grant No.：JPMJPR24H2

Researcher

Mengnan Ke

Outline

To achieve the realization of CFET with next generation channel materials, this project aims to develop 3D integrated CMOS using Ge and two-dimensional material semiconductors and their stacked structures. It successfully designs and develops the world’s first 3D integrated CMOS employing Ge pFET and MoS2 nFET, with the establishment of key technologies such as high-quality Ge and MoS2 MOS interfaces formation, stacked MoS2 channel formation via transfer methods, and low-resistance source/drain contacts formation enabling direct 3D connection. The optimal structures and processes for these devices will also be clarified.

Daisuke Kan

Polarization control of two-dimensional ferroelectrics and device applications

Grant No.：JPMJPR24H3

Researcher

Daisuke Kan

Outline

Two-dimensional ferroelectrics are nanomaterials that can maintain spontaneous polarization even when thinned down to the thickness of one or two unit cells of their crystal lattices (approximately 1 nanometer). In this research project, we will develop techniques for two-dimensional ferroelectrics and utilize approaches that have not been available in previous ferroelectric material research, such as twist stacking, to control spontaneous polarization and achieve superior properties. We aim to realize a two-dimensional ferroelectric material with superior properties and develop ultra-low power consumption memory devices.

Yuya Shimazaki

Construction of moire molecular science

Grant No.：JPMJPR24H4

Researcher

Yuya Shimazaki

Outline

In this project, I plan to realize highly uniform few electron states in heterostructures of semiconductor transitional dichalcogenides by combining weak gate-confinement and strong moiré potential. Especially, I plan to detect single electron states using trion photoluminescence, trion excitation spectroscopy, and also quanutm optical measurements. Finally, I plan to realize moiré molecules composed of few electrons using gate electrode control.

Katsuaki Sugawara

Development of novel atomic-layer nanomaterials by integration of nano measurement and molecular-beam epitaxy

Grant No.：JPMJPR24H5

Researcher

Katsuaki Sugawara

Outline

In this PRESTO project, I aim to fabricate new atomic-layer nanomaterials by using MBE, atomic replacement, and precipitation methods, and clarify their novel quantum physical properties. Also, To elucidate the mechanism of these physical phenomena through electronic structure imaging using nano-measurements such as micro-/nano-ARPES will discover novel quantum phenomena in atomic-layer materials. From the experimental results, I will contribute to developing new functional nanodevices called “atomic-layer electronics” based on atomic-layer nanomaterials.

Yutaro Takeuchi

Novel functionalities of nanoscale spin devices with topological antiferromagnetic thin films

Grant No.：JPMJPR24H6

Researcher

Yutaro Takeuchi

Outline

The discovery of quantum intriguing effects in topological antiferromagnets has accelerated research on spin devices using antiferromagnets as core materials. Here, we utilize the current-induced spin rotation of topological antiferromagnets in nanoscale devices. In particular, we will demonstrate the ultrafast spin switching and oscillation effects, which are qualitatively different from spin devices with conventional ferromagnets. This research aims to create core technologies for developping high-performance nonvolatile memories and high-speed communication devices.

Miuko Tanaka

Exploring new phenomena of van der Waals materials using microwave

Grant No.：JPMJPR24H7

Researcher

Miuko Tanaka

Outline

Van der Waals materials are an ideal platform for condensed matter physics, as they allow the creation of desired physical systems by combining multiple materials. However, due to their extremely small volume, measurement methods have been limited so far. In the previously unexplored energy range of MHz to GHz, important physics related to superconductors and magnetic materials exist. In this study, I establish a method for measuring the microwave response of atomic layer materials and explore new phenomena related to superconductivity and magnetism.

Yijin Zhang

Micro-spectroscopy of two-dimensional materials devices

Grant No.：JPMJPR24H8

Researcher

Yijin Zhang

Outline

In this study I investigate unexplored areas of nano devices composed of two-dimensional materials and their van der Waals assemblies by optical micro-spectroscopy. I will explore optical and opto-electrical properties and functionalities of nano devices at ultra-low temperature and under high magnetic field. These areas have remained unexplored because of the difficulty in measurement technique, which can be overcame by my own-built system that enables simultaneous measurements of electrical transport and optical micro-spectroscopy. In addition, I will construct a unique van der Waals assembly system, which is compatible with optical micro-spectrometer. With this system, I will try to establish a new research style of in-situ characterization during van der Waals assembly.

Takahiro Fujita

Exploration of Interfacial Emergent Magnetotransport Phenomena toward Device Application

Grant No.：JPMJPR24H9

Researcher

Takahiro Fujita

Outline

Electrons in topologically non-trivial magnetic structures are driven by virtual emergent magnetic fields, exhibiting various emergent magnetotransport phenomena. In this research, we explore new functionalities and novel physical phenomena induced by the emergent magnetic fields at oxide heterointerfaces, where electrical conductivity and magnetism are functionally separated. These interfaces enable investigations impossible in conventional bulk materials. We aim to elevate oxide heterointerfaces to a novel research platform for “interfacial” emergent magnetotransport phenomena. To achieve this, we will develop a growth method that achieves high crystallinity and is adaptable to a wide range of materials.

Michio Matsumoto

Organic semiconductive materials with geometrical frustration

Grant No.：JPMJPR24HA

Researcher

Michio Matsumoto

Outline

Geometrical frustration introduces complexity into symple material structures and derives unique physical properties. Despite successful examples in inorganic materials with metal ions, there are few examples of geometrical frustration in organic molecular crystals. The aim of this study is to develop a new method to synthesize organic semi-conductive molecular crystals with geometrical frustration by using molecular gears and to investigate the physical properties of the resulting new materials.