[Topology] Year Started : 2018

Takafumi Sato

Development of new hybrid topological materials by nano-spin-ARPES

Research Director
Takafumi Sato

Professor
Advanced Institute for Materials Research
Tohoku University

Collaborator
Tamio Oguchi Specially Appointed Professor
Graduate School of Engineering Science
Osaka University
Hiroshi Kumigashira Professor
Institute of Multidisciplinary Research for Advanced Materials
Tohoku University
Kouji Segawa Professor
Faculty of Science
Kyoto Sangyo University
Outline

This research aims to create new hybrid topological materials with nano-spin ARPES. We construct a nano-spin ARPES apparatus with a one-order higher resolution than that of conventional systems, with which we precisely determine/investigate the electronic structure (energy, momentum, and spin) of novel topological materials even with a nano-scale size. Nano-spin ARPES also enables us to explore the pin-point electronic structure within a small area of integrated topological devices during the operation. We steadily proceed with this research by always looking towards the device applications, such as high-temperature topological superconductors applicable to quantum computations and two-dimensional topological insulators to be used in low-power field-effect transistors.

Atsushi Tsukazaki

Creation of functional interfaces based on topological quantum materials

Research Director
Atsushi Tsukazaki

Professor
Institute for Materials Research
Tohoku University

Collaborator
Kentaro Nomura Professor
School of Science
Kyushu University
Yukitoshi Motome Professor
Graduate School of Engineering
The University of Tokyo
Outline

This research aims for the creation of functional interfaces based on topological quantum materials. The topological materials have great potential to provide significant functionalities in terms of robustness, high efficiency, and less dissipative charge transport. The heterostructure devices with various topological materials, such as three-dimensional topological insulators and Weyl semimetals, will be explored in this project to achieve the functionalities towards highly sensitive sensor and fundamental properties of Majorana fermion. The control methods for the band topology and Fermi energy are essential for the materialization of device applications with extensive collaborative researches. By combining the computational and experimental approaches, we will materialize the intriguing properties emerged at the designed heterointerfaces.

Satoru Nakatsuji

Functional Magnets and Devices based on Topological Electronic Structure

Research Director
Satoru Nakatsuji

Professor
The Institute for Solid State Physics
The University of Tokyo

Collaborator
Ryotaro Arita Team Leader
Center for Emergent Matter Science
RIKEN
Yoshichika Otani Professor
The Institute for Solid State Physics Division of Nanoscale Science
The University of Tokyo
Kay Yakushiji Researcher
Research Center for Emerging Computing Technologies
National Institute of Advanced Industrial Science and Technology
Outline

Current spintronics technology faces various difficulties as ferromagnets are being used for main devices. We will solve them by using antiferromagnets that have novel functions originating from topological electronic structure. In particular, by developing Weyl magnets that exhibit giant electronic and magnetic responses and by studying the electronic control of their nano-scale magnetic domains, we will establish the technology useful for topological antiferromagnetic spintronics.

Xiao Hu

Creating Topological States and Innovative Functionality Based on Artificial Graphenes

Research Director
Xiao Hu

Senior Scientist with Special Missions
Research Center for Materials Nanoarchitectonics
National Institute for Materials Science

Collaborator
Tomohiro Amemiya Associate Professor
School of Engineering
Tokyo Institute of Technology
Akihiko Kikuchi Professor
Faculty of Science and Technology, Department of Engineering and Applied Sciences
Sophia University
Outline

Starting from graphene and artificial graphenes exhibiting Dirac-like dispersions originated from the honeycomb structure, we create novel topological states in terms of band engineering based on local real-space manipulations with the aid of advanced nano fabrication techniques. Making use of the crystalline symmetry, we shall achieve topological photonics properties in the optic frequency regime and for visible lights using dielectric materials such as silicon and GaN. Especially, we exploit the topological unidirectional light propagation for stable and compact topological lasers without isolators, where single-mode lasing is possible over a large gain regime. Meanwhile, we explore the possibility of integrating various topological properties, including those of electron, phonon and physics waves, towards realization of innovative functionality.

Nam Hai Pham

Spin-orbit-torque magnetic memories utilizing topological surface states

Research Director
Nam Hai Pham

Associate Professor
School of Engineering
Tokyo Institute of Technology

Collaborator
Masaki Kobayashi Associate Professor
The Graduate School of Engineering
The University of Tokyo
Yasuyoshi Miyamoto Principal Research Engineer Science & Technology Research Laboratories Japan Broadcasting Corporation
Outline

In this research, we aim at realizing novel magnetic memories, including spin-orbit-torque magnetoresistive random access memory (SOT-MRAM) and racetrack memory with magnetic chiral domain walls or skyrmions. To obtain ultrafast and ultralow power magnetization switching in SOT-MRAM, we utilize the colossal spin Hall effect generated by the surface states of BiSb topological insulator. We first establish the manufacturing technology of BiSb topological insulator / magnetic thin film heterostructures with perpendicular magnetic anisotropy by the sputtering method. Then, we demonstrate ultrafast and ultralow power magnetization switching by spin-orbit-torque in SOT-MRAM. We also establish methods to generate, to drive, and to detect chiral domain walls and skyrmions in racetrack memory using the colossal Dzyaloshinskii-Moriya interactions and SOT from the BiSb layers.

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