Research Director

Yasumitsu Miyata

Tokyo Metropolitan University

Outline

This research project focuses on the “in-plane atomic-layer heterostructures” with “1D interface” and aims to establish its science and technology for the realization of ultralow power, 3D integrated devices. In particular, transition metal chalcogenide atomic layers are explored to demonstrate novel opto/electronic devices including tunneling field effect transistors. For this purpose, we will try to understand and control the electric states at the 1D interface. In addition, integration processes to precisely control the growth position and crystal orientation of the atomic-layer heterostructures will be developed.