Development of super-high-quality Si crystal using functional grain boundaries

Kentaro Kutsukake

Assistant Professor, Institute for Materials Research, Tohoku University

Abstract

Grain boundaries in Si crystals have attractive properties, such as sinks for point defects and sites of impurity gettering. I will comprehensively investigate the properties of grain boundaries in Si crystal using a unique crystal growth method with multi-seeds. On the basis of the findings of the fundamental research, I will realize the super-high-quality Si crystal using functional grain boundaries. This will result in improvement in the solar cell performance and reduction of the material cost.