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| [1] |
Y. Ohno, S. Kishimoto, T. Mizutani, T. Okazaki, and H. Shinohara "Chirality assignment of individual single-walled carbon nanotubes in carbon nanotube FETs by micro-photocurrent spectroscopy" Appl. Phys. Lett. vol. 84, pp. 1368-1370, 2004.
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| [2] |
Y. Ohno, T. Nakao, S. Kishimoto, K. Maezawa, and T. Mizutani, "Effect of surface passivation on breakdown of AlGaN/GaN HEMTs", Appl. Phys. Lett. 2004. (to be published).
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| [3] |
大野雄高、嶋田行志、岸本茂、岡崎俊也、篠原久典、水谷孝、（解説論文）「カーボンナノチューブトランジスタの可能性」 ナノ学会会報 2003年12月.
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| [4] |
T. Tanaka, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Experimental Demonstration of Capacitor-Coupled Resonant Tunneling Logic Gates for Ultra-short Gate-delay Operation", Jpn. J. Appl. Phys. vol. 42, pt. 1, no. 11, pp. 6766-6771, 2003..
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| [5] |
K. Sato, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Fabricated on a GaAs-based Semiconductor-on-Insulator Substrate Using a Spin-On Low-k Dielectric Film", Jpn. J. Appl. Phys. vol. 42, pt. 1, no. 11, pp. 6839-6840, 2003..
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| [6] |
T. Mizutani, T. Okino, K. Kawada, Y. Ohno, S. Kishimoto, and K. Maezawa, "Drain Current DLTS of AlGaN/GaN HEMTs", Phys. Stat. Sol. (a) vol. 200, no. 1, pp. 195-198 (2003)..
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| [7] |
T. Nakao, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Study on Off-State Breakdown of AlGaN/GaN HEMTs", Phys. Stat. Sol. (c), vol. 0, no. 7, pp. 2335-2338, 2003.
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| [8] |
T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, "A Study on Current Collapse in AlGaN/GaN HEMTs Induced by Bias Stress," IEEE Trans. on Electron Device, vol. 50, no. 10, pp, 2015-2020, 2003..
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| [9] |
T. Shimada, Y. Ohno, T. Okazaki, T. Sugai, K. Suenaga, S. Iwatsuki, S. Kishimoto, T. Mizutani, T. Inoue, R. Taniguchi, N. Fukui, H. Okubo, H. Shinohara "Transport properties of C78, C90 and Dy@C82 fullerenes-nanopeapods by field effect transistors" Physica E, vol. 21, pp. 1089-1092, 2004.
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| [10] |
M. Ochiai, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator", Jpn. J. Appl. Phys., vol. 42, Pt. 1, no. 4B, pp. 2278-2280, 2003.
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| [11] |
K. Kumada, T. Murata, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, and N. Sawaki, "Chracterization of Electrical Properties of Micro-Schottky Contacts on Epitaxial Lateral Overgrowth GaN", Jpn. J. Appl. Phys., vol. 42, Pt. 1, no. 4B, pp. 2250-2253, 2003.
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| [12] |
I. Soga, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Fluidic Assembly of Thin GaAs Blocks on Si Substrates", Jpn. J. Appl. Phys., vol. 42, Pt. 1, no. 4B, pp. 2226-2229, 2003.
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| [13] |
K. Kawada, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, M. Takakusaki, and H. Nakata, "Comparison of Electrical Chracteristics of Metamorphic HEMTs with InP HEMTs and PHEMTs", Jpn. J. Appl. Phys., vol. 42, Pt. 1, no. 4B, pp. 2219-2222, 2003.
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| [14] |
Y. Ohno, S. Iwatsuki, T. Hiraoka, T. Okazaki, S. Kishimoto, K. Maezawa, H. Shinohara, and T. Mizutani, "Position-Controlled Carbon Nanotube FETs Fabricated by CVD Synthesis Using Patterned Metal Catalyst," Jpn. J. Appl. Phys. vol. 42, pt. 1, no. 6B, pp. 4116-4119, 2003.
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| [15] |
T. Mizutani, H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, and K. Maezawa, "Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys, vol. 42, Pt. 1, pp. 424-425, 2003.
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| [16] |
T. Okazaki, T. Shimada, K. Suenaga, Y. Ohno, T. Mizutani, J. Lee, Y. Kuk and H. Shinohara, "Electronic Properties of Gd@C82 Metallofullerene Peapods :(Gd@C82)n@SWNTs", Applied Physics A, 76, 475, 2003.
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| [17] |
Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, "Temperature Distribution in AlGaN/GaN HEMTs Measured by Micro-Raman Scattering Spectroscopy", Phys. Stat. Sol. (c) vol. 0, No. 1, pp. 57-60, 2002.
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| [18] |
T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, "Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations", Phys. Stat. Sol. (a), vol. 194, no. 2, pp. 447-451, 2002.
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| [19] |
T. Shimada, T. Okazaki, R. Taniguchi, T. Sugai, H. Shinohara, K. Suenaga, Y. Ohno, S. Mizuno, S. Kishimoto, and T. Mizutani, "Ambipolar Field-Effect Transistor Behavior of Gd@C82 Metallofullerene Peapods", Appl. Phys. Lett. vol. 81, no. 21, pp. 4067-4069, 2002.
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| [20] |
S. Mizuno, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Large Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors", Jpn. J. Appl. Phys. vol. 41, Part 1, No. 8, pp. 5125-5126, 2002.
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| [21] |
H. Makihara, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "The Low-Frequency Noise Characteristics of AlGaN/GaN HEMTs", Int. Phys. Conf. Series, no. 170, pp. 113-118, 2002.
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| [22] |
Y. Ohno, T. Nakao, M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, "Electroluminescence in AlGaN/GaN HEMTs", Int. Phys. Conf. Series, no. 170, pp. 119-124, 2002.
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| [23] |
Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, and T. Mizutani, "Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy", Jpn. J. Appl. Phys. vol.41, No.4B, pp. L452-L454, 2002.
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| [24] |
T. Nakao, Y. Ohno, M. Akta, S. Kishimoto, K. Maezawa, and T. Mizutani, "Electroluminescence Distribution in AlGaN/GaN High Electron Mobility Transistors under High Bias Votlage", Jpn. J. Appl. Phys. vol. 41, no. 4A, pp. 1990-1991, 2002.
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| [25] |
Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "50 GHz Frequency Divider Using Resonant Tunneling Chaos Circuit", Electronics Lett. vol. 38, no. 7, pp. 305-306, 2002.
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| [26] |
Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "High-Speed Operation of a Novel Frequency Divider Using Resonant Tunneling Chaos Circuit", Jpn. J. Appl. Phys. vol. 41, pt. 1, no. 2B, 1150-1153, 2002.
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| [27] |
T. Aoyama, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Effects of the HEMT Parameters on the Operations Frequency of Resonant Tunneling Logic Gate MOBILE", Trans. IEICE C, vol. J85-C, pp. 181-186, 2002.
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| [28] |
Y. Yokoyama, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "A delta-sigma modulator using resonant tunneling diodes", Jpn. J. Appl. Phys. vol. 40, Part.2, no. 10A, pp. L1005-L1007, 2001.
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| [29] |
Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, "Resonant-Tunneling-Injection Photoluminescence of Single InAs Self-Assembled Quantum Dots Embedded in Thin AlGaAs Barrier", Jpn. J. Appl. Phys., vol. 40, no. 3B, pp. 2065-2068, 2001.
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| [30] |
Y. Ohno, K. Asaoka, S. Kishimoto, K. Maezawa, and T. Mizutani, "Observation of Resonant Tunneling through Single Self-Assembled InAs Quantum Dots using Electro-Photoluminescence Spectroscopy", J. Appl. Phys., vol. 87, no. 9, pp. 4332-4336, 2000.
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| [31] |
Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, and T. Akeyoshi, "Photoluminescence Study of Resonant Tunneling Transistor with p+/n-Junction Gate", Jpn. J. Appl. Phys., vol. 39, no. 1, pp. 35-40, 2000.
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| [32] |
Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, and T. Akeyoshi, "Optoelectronic Flexible-Function Logic Gate Using Monostable-Bistable Transition of Serially Connected Resonant Tunneling Transistors", Jpn. J. Appl. Phys., vol. 38, no. 4, pp. 2586-2589, 1999.
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| [33] |
H. Niwa, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani, H. Yamazaki, and T. Taniguchi, "Measurements of Electroluminescence Intensity Distribution in the Direction of Gate Width of n+ Self-Aligned Gate GaAs Metal-Semiconductor Field-Effect Transistors", Jpn. J. Appl. Phys., vol. 38, no. 3, pp. 1363-1364, 1999.
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| [34] |
34. T. Murata, Y. Ohno, S. Kishimoto, and T. Mizutani, "Photoluminescence Intensity Enhancement by Electron Beam Irradiation into GaAs Quantum Wells", Solid State Electron., vol. 43, pp. 147-152, 1999.
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| [35] |
K. Asaoka, Y. Ohno, S. Kishimoto, and T. Mizutani, "Microscopic Photoluminescence Study of InAs Single Quantum Dots Grown on (100) GaAs", Jpn. J. Appl. Phys., vol. 38, no. 1B, pp. 546-549, 1999.
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| [36] |
Y. Ohno, S. Kishimoto, T. Mizutani, and T. Akeyoshi, "Logic Gate for Optical Input Using Monostable-Bistable Transition of Serially Connected Resonant Tunnelling Transistors", Electronics Lett., vol. 34, no. 3, pp. 250-251, 1998.
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| [37] |
H. Niwa, Y. Ohno, S. Kishimoto, T. Mizutani, H. Yamazaki, and T. Taniguchi, "Electroluminescence Measurement of n+ Self-Aligned Gate GaAs MESFETs", Jpn. J. Appl. Phys., vol. 37, no. 3, pp. 1343-1347, 1998.
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| [38] |
Y. Ohno, S. Kishimoto, T. Mizutani, and T. Akeyoshi, "Photoluminescence Study of Resonant-Tunneling Transistor", Int. Phys. Conf. Series, 97TH8272, pp. 613-616, 1997.
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| [39] |
Y. Ohno, S. Kishimoto, T. Mizutani, and K. Maezawa, "Operation Speed Consideration of Resonant Tunneling Logic Gate Based on Circuit Simulation", IEICE Trans., Electron., vol. E79-C, No. 11, 1530-1536, 1996.
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