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舟窪 浩 (ふなくぼ ひろし) |
(東京工業大学 大学院総合理工学研究科物質科学創造専攻 助教授) |
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1986年3月 |
東京工業大学
工学部 無機材料工学科 卒業 |
1988年3月 |
東京工業大学大学院
理工学研究科 無機材料工学専攻 修士課程 修了 |
1989年3月
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東京工業大学大学院
理工学研究科 無機材料工学専攻
博士後期課程 中退 |
1995年2月 |
博士(工学)
取得 |
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1989年4月 |
東京工業大学
工学部 助手 |
1997年4月 |
東京工業大学大学院
総合理工学研究科 物質科学創造専攻 助教授 |
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1985年4月〜'88年3月 |
「MOCVD法による遷移金属窒化物薄膜の合成とその相関系」 |
1987年4月〜'90年3月 |
「MOCVD法による窒化鉄基薄膜の合成とその磁性」 |
1990年3月〜'98年3月
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「MOCVD法による強誘電性および半導性(Ba,Sr)TiO3系薄膜の合成とその電気特性」 |
1989年4月〜続行中 |
「MOCVD法による(Pb,La)(Zr,Ti)O3薄膜の合成とその強誘電特性」 |
1999年4月〜続行中
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「MOCVD法による強誘電性SrBi2Ta2O9薄膜の合成とその強誘電特性」
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[1] |
Hiroshi Funakubo, Takayuki Watanabe,
Takashi Kojima, Tomohiro Sakai, Yuji Noguchi, Masaru
Miyayama, Minoru Osada, Masato Kakihana, and Keisuke
Saito, "Property Design of Bi4Ti3O12-Based Thin
Films Using a Site-Engineered Concept", J. Cryst.
Growth 248, 180-185 (2003).
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[2] |
Tomohiro Sakai, Takayuki Watanabe,
Hiroshi Funakubo, Keisuke Saito, and Minoru Osada,
"Effect of La Substitution on Electrical Properties
of Highly Oriented Bi4Ti3O12 Films Prepared by Metalorganic
Chemical Vapor Deposition", Jpn. J. Appl. Phys.
42(1), 166-169 (2003).
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[3] |
Keisuke Saito, Isao Yamaji,
Takao Akai, Masatoshi Mitsuya, and Hiroshi Funakubo,
"Reciprocal Space Mapping Quantitative Effects of
Preferred Orientation and Impurity Phases on Ferroelectric
Properties of SrBi2(Ta1-xNbx)2O9 Thin Films by X-Ray
Diffraction", Jpn. J. Appl. Phys. 42(2A), 539-543
(2003).
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[4] |
Keisuke Saito, Toshiyuki Kurosawa,
Takao Akai, Takahiro Oikawa, and Hiroshi Funakubo,
"Structural Characterization and 90° Domain Contribution
to Ferroelectricity of Epitaxial Pb(Zr0.35,Ti0.65)O3
Thin Films", J. Appl. Phys. 93(1), 545-550 (2003).
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[5] |
Takashi Kojima, Takayuki Watanabe,
Hiroshi Funakubo, Keisuke Saito, Minoru Osada, and
Masato Kakihana, "Ferroelectric Properties of Lanthanide-Substituted
Bi4Ti3O12 Epitaxial Thin Films Grown by Metalorganic
Chemical Vapor Deposition", J. Appl. Phys. 93(3),
1707-1712 (2003).
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[6] |
Takayuki Watanabe, Keisuke
Saito, Minoru Osada, Toshimasa Suzuki, Masayuki
Fujimoto, Mamoru Yoshimoto, Atsushi Sasaki, Jin
Liu, Masato Kakihana, and Hiroshi Funakubo, "Long-Range
Lattice Matching between (100)/(010) Bismuth-Layered
Perovskite Structure and (101) Rutile Structure",
Mater. Res. Soc. Symp. Proc. 748, U2.4.1-U2.4.6
(2003).
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[7] |
Hiroshi Funakubo, Tomohiro Sakai,
Takayuki Watanabe, Minoru Osada, Masato Kakihana,
Keisuke Saito, Yuji Noguchi,and Masaru Miyayama,
"Growth Of Epitaxial Site-Engineered Bi4Ti3O12-Based
Thin Films by MOCVD and Their Characterization",
Mater. Res. Soc. Symp. Proc. 748, U2.2.1-U2.2.6
(2003).
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[8] |
Takashi Kojima, Yukio Sakashita,
Takayuki Watanabe, Kazumi Kato, Hiroshi Funakubo,
"Novel Candidate of c-Axis-Oriented BLSF Thin Films
for High-Capacitance Condenser", Mater. Res. Soc.
Symp. Proc. 748, U15.2.1-U15.2.6 (2003).
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[9] |
Keisuke Saito, Toshiyuki Kurosawa,
Takao Akai, Shintaro Yokoyama, Hitoshi Morioka,
Takahiro Oikawa, and Hiroshi Funakubo, "Characterization
of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition
near the Morphotropic Phase Boundary", Mater. Res.
Soc. Symp. Proc. 748, U13.4.1-U13.4.6 (2003).
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[10] |
Hiroshi Uchida, Isao Okada,
Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe,
and Hiroshi Funakubo, "Enhancement of Remanent Polarization
of BIT-Based Thin Films by Ti-Site Substitution
Using Ions with Higher Charge Valences", Mater.
Res. Soc. Symp. Proc. 748, U12.1.1-U12.1.11 (2003).
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[11] |
Tetsuo Shibutami, Kazuhisa
Kawano, Noriaki Oshima, Shintaro Yokoyama, and Hiroshi
Funakubo, "A Novel Ruthenium Precursor for MOCVD
without Seed Ruthenium Layer", Mater. Res. Soc.
Symp. Proc. 748, U12.7.1-U12.7.6 (2003).
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[12] |
Yoshihisa Honda, Shintaro Yokoyama,
and Hiroshi Funakubo, "Characterization of PLZT
Thick Film Prepared by MOCVD", Trans. Mat. Res.
Soc. Jpn. 28(1), 157 (2003).
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[13] |
G. Asano, T. Satake, K. Ohtsuki,
and H. Funakubo, "Investigation of Gas-Phase Reaction
Effect on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3
Film Using In-situ-Monitored by Fourier Transform
Infrared Spectroscopy", Proc. Electrochem. Soc.
203rd Meeting, PV 2003-08 Chemical Vapor Deposition
XVI (CVD-VXI) and EUROCVD 14, 471 (2003).
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[14] |
H. Funakubo, G. Asano, T. Ozeki,
H. Machida, T. Yoneyama, and Y. Takamatsu, "Effect
of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O3
Films Using Liquid-Deliver Source Supply System",
Proc. Electrochem. Soc. 203rd Meeting, PV 2003-08
Chemical Vapor Deposition XVI (CVD-VXI) and EUROCVD
14, 1411 (2003).
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[15] |
Gouji Asano, Takahiro Oikawa,
and Hiroshi Funakubo, "Highly-Reproducible Preparation
of Pb(Zr,Ti)O3 Films at Low Deposition Temperature
by Metalorganic Chemical Vapor Deposition", Jpn.
J. Appl. Phys. 42(5A), 2801 (2003).
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[16] |
Tomohiro Sakai, Takayuki Watanabe,
Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru
Miyayama, and Hiroshi Funakubo, "Crystal Structure
and Ferroelectric Property of Tungsten-substituted
Bi4Ti3O12 Thin Films Prepared by Metal-Organic Chemical
Vapor Deposition", Jpn. J. Appl. Phys. 42(5A), 2850
(2003).
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[17] |
Kouji Tokita, Masanori Aratani,
and Hiroshi Funakubo, "Substrate Effect on The Crystal
Structure and Ferroelectricity of Low-temperature-deposited
Pb(Zr,Ti)O3 Thin Films by Metalorganic Chemical
Vapor Deposition", Appl. Phys. Lett. 82(23), 4122
(2003).
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[18] |
Kenji Takahashi, Makoto Nakayama,
Shintaro Yokoyama, Takeshi Kimura, Eisuke Tokumitsu,
and Hiroshi Funakubo, "Preparation of hafnium oxide
films from oxygen-free Hf[N(C2H5)2]4 precurcer and
their properties", Appl. Surf. Sci. 216, 296 (2003).
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[19] |
Hitoshi Morioka, Gouji Asano,
Takahiro Oikawa, Hiroshi Funakubo, and Keisuke Saito,
"Large remanent polarization of 100% polar-axis-oriented
epitaxial Pb(Zr0.35Ti0.65)O3 thin films", Appl.
Phys. Lett. 82(26), 4761 (2003).
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[20] |
Tetsuo Shibutami, Kazuhisa
Kawano, Noriaki Oshima, Shintaro Yokoyama, and Hiroshi
Funakubo, "Ruthenium Films with High Nuclear Density
Deposited by MOCVD Using a Novel Liquid Precursor",
Electrochemical and Solid-State Lett. 6(9), C117
(2003).
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[21] |
Satoru Kaneko, Yoshitada Shimizu,
Hiroyasu Yuasa, Masahiko Mitsuhashi, Seishiro Ohya,
Keisuke Saito, Kenji Takahashi, Takeshi Kimura,
and Hiroshi Funakubo, "Bi2Sr2Ca1Cu2Ox Thin Film
Deposition by Slower Q-Switched YAG Laser", J. Vac.
Soc. Jpn. 46(5), 77 (2003).
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[22] |
Muneyasu Suzuki, Hajime Nagata,
Hiroshi Funakubo, and Tadashi Takenaka, "Piezoelectric
Properties of Lanthanum Modified Bi3TiTaO9 Ceramics",
Key Eng. Mater. 248, 11 (2003).
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[23] |
Hiroshi Funakubo and Tomohiko
Ozeki, "Effect of Starting Materials on Deposition
Behavior, Crystal Structure and Electrical Properties
of MOCVD-PZT Films", Key Eng. Mater. 248, 57 (2003).
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[24] |
Hirofumi Matsuda, Takashi Iijima,
Hiroshi Uchida, Isao Okada, Takayuki Watanabe, Hiroshi
Funakubo, Minoru Osada, and Masato Kakihana, "Synthesis
and Electrical Properties of Sr- and Nb-Cosubstituted
Bi4-xSrxTi3-xO12 Polycrystalline Thin Films", Jpn.
J. Appl. Phys. 42, 2(8A), L949 (2003).
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[25] |
M. Takahashi, K. Kodama, M.
Noda, M. Okuyama, Takayuki Watanabe, and Hiroshi
Funakubo, "X-ray Photoelectron and UV Photoyield
Spectroscopic Studies on SrxBiyTa2O9 Films", J.
Korean Phys. Soc. 42, S1399 (2003).
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[26] |
Hiroshi Funakubo, Tomohiro Sakai,
Takayuki Watanabe, Takashi Kojima, Yuji Noguchi,
Masaru Miyayama, and Minoru Osada, "Low Temperature
Deposition of Bi4Ti3O12-Based Ferroelectric Thin
Films Using Site Engineering Concept", "Morphotropic
Phase Boundary Perovskites, High Strain Piezoelectrics,
and Dielectric Ceramics", Ceramic Transactions 136,
407 (2003). The American Ceramic Society.
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[27] |
Gouji Asano, Takahiro Oikawa,
Hiroshi Funakubo, and Keisuke Saito, "Good Ferroelectricity
of Pb(Zr,Ti)O3 Thin Film with Highly-Reproducibility
Deposited on Ir Bottom Electrode at 395°C", Jpn.
J. Appl. Phys. 42(9A/B), L1083 (2003), 42(11A),
L1346(2003).
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[28] |
Takeshi Kimura, Kensuke Akiyama,
Takayuki Watanabe, Keisuke Saito, and Hiroshi Funakubo,
"Crystal Structure Analysis of Metalorganic Chemical
Vapor Deposition-β-FeSi2 Thin Film by X-ray Diffraction
Measurement", Jpn. J. Appl. Phys. 42, 1(8), 4943
(2003).
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[29] |
Shintaro Yokoyama, Yoshihisa
Honda, Hitoshi Morioka, Takahiro Oikawa, Hiroshi
Funakubo, Takashi Iijima, Hirohumi Matsuda, and
Keisuke Saito, "Large Piezoelectric Response in
(111)-oriented Epitaxial Pb(Zr,Ti)O3 Films Consisting
of Mixed Phases with Rhombohedral and Tetragonal
Symmetry", Appl. Phys. Lett. 83(12), 2408 (2003).
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[30] |
Kensuke Akiyama, Seishiro Ohya,
and Hiroshi Funakubo, "β-FeSi2 Thin Film Preparation
by ECR Plasma-Enhanced MOCVD", Trans. Mater. Res.
Soc. Jpn 28(3), 805 (2003).
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[31] |
Shintaro Yokoyama, Yoshihisa
Honda, Hitoshi Morioka, Gouji Asano, Takahiro Oikawa,
Takashi Iijima, Hirohumi Matsuda, and Hiroshi Funakubo,
"Compositional Dependence of Electrical Properties
of Highly (100)-/(001)-oriented Pb(Zr,Ti)O3 Thick
Films Prepared on Si Substrates by Metalorganic
Chemical Vapor Deposition", Jpn. J. Appl. Phys.
42(9B), 5922 (2003).
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[32] |
Hiroshi Uchida, Keiko Sakurai,
Isao Okada, Hirofumi Matsuda, Takashi Iijima, Takashi
Kojima, Takayuki Watanabe, and Hiroshi Funakubo,
"Electrical Properties of (Ca,Sr)Bi4Ti4O15 Thin
Films Fabricated Using a Chemical Solution Deposition
Method",Jpn. J. Appl. Phys., 42(9B), 5990 (2003).
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[33] |
Shiro Hino, Makoto Nakayama,
Kenji Takahashi, Hiroshi Funakubo, and Eisuke Tokumitsu,
"Characterization of Hafnium Oxide Thin Films by
Source Gas Pulse Introduced Metalorganic Chemical
Vapor Deposition Using Amino-Family Hf Precursors",
Jpn. J. Appl. Phys., 42(9B), 6015 (2003).
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[34] |
Muneyasu Suzuki, Hajime Nagata,
Jin Ohara, Hiroshi Funakubo, and Tadashi Takenaka,
"Bi3-xMxTiTaO9 (M=La or Nd) Ceramics With High Mechanical
Quality Factor Qm", Jpn. J. Appl. Phys., 42(9B),
6090 (2003).
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[35] |
Takashi Kojima, Takayuki Watanabe,
Hiroshi Funakubo, Yuikio Sakashita, and Takahiro
Oikawa, "Capacitor Applications of c-Axis-Oriented
Bismuth Layer Structured Ferroelectric Thin Films",
27th International Cocoa Beach Conference on Advanced
Ceramics and Composites: B, Ceramic Engineering
and Science Proceedings, Vol.24, Issue 4, 2003,
57-64, The American Ceramic Society, Jan.26-31,
2003, Cocoa Beach, Florida.
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[36] |
Gouji Asano, Hitoshi Morioka,
Hiroshi Funakubo, Tetsuo Shibutami, Noriaki Oshima,
"Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared
by metalorganic chemical vapor deposition at 3950C",
Appl. Phys. Lett., 83(26)(2003)5506-5508.
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※「1期生」 = 平成13年度採用研究者 2001年〜2004年
※「2期生」 = 平成14年度採用研究者 2002年〜2005年
※「3期生」 = 平成15年度採用研究者 2003年〜2006年
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