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磯部 寛之 大谷 啓太 大友 明 大野 雄高 高村 禅 塚越 一仁 舟窪 浩
研究者紹介
 
2次元ナノレイヤー積層による新規誘電特性の発現 -サイズ効果フリー高誘電体の創製-
舟窪 浩 (ふなくぼ ひろし)
(東京工業大学 大学院総合理工学研究科物質科学創造専攻 助教授)
  URL: http://f-lab.iem.titech.ac.jp/f-lab.htm
http://www.iem.titech.ac.jp/ (専攻HP)

生年 1963年
出身地 長野県
学歴
 
1986年3月 東京工業大学 工学部 無機材料工学科 卒業
1988年3月 東京工業大学大学院 理工学研究科 無機材料工学専攻 修士課程 修了
1989年3月

東京工業大学大学院 理工学研究科 無機材料工学専攻
博士後期課程 中退
1995年2月  博士(工学) 取得

職歴
 
1989年4月  東京工業大学 工学部 助手
1997年4月 東京工業大学大学院 総合理工学研究科 物質科学創造専攻 助教授

研究歴
 
1985年4月〜'88年3月 「MOCVD法による遷移金属窒化物薄膜の合成とその相関系」
1987年4月〜'90年3月 「MOCVD法による窒化鉄基薄膜の合成とその磁性」
1990年3月〜'98年3月

「MOCVD法による強誘電性および半導性(Ba,Sr)TiO3系薄膜の合成とその電気特性」
1989年4月〜続行中 「MOCVD法による(Pb,La)(Zr,Ti)O3薄膜の合成とその強誘電特性」
1999年4月〜続行中

「MOCVD法による強誘電性SrBi2Ta2O9薄膜の合成とその強誘電特性」
 
発表論文リスト >>>さきがけ研究
 
[1] Hiroshi Funakubo, Takayuki Watanabe, Takashi Kojima, Tomohiro Sakai, Yuji Noguchi, Masaru Miyayama, Minoru Osada, Masato Kakihana, and Keisuke Saito, "Property Design of Bi4Ti3O12-Based Thin Films Using a Site-Engineered Concept", J. Cryst. Growth 248, 180-185 (2003).
[2] Tomohiro Sakai, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, and Minoru Osada, "Effect of La Substitution on Electrical Properties of Highly Oriented Bi4Ti3O12 Films Prepared by Metalorganic Chemical Vapor Deposition", Jpn. J. Appl. Phys. 42(1), 166-169 (2003).
[3] Keisuke Saito, Isao Yamaji, Takao Akai, Masatoshi Mitsuya, and Hiroshi Funakubo, "Reciprocal Space Mapping Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films by X-Ray Diffraction", Jpn. J. Appl. Phys. 42(2A), 539-543 (2003).
[4] Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Takahiro Oikawa, and Hiroshi Funakubo, "Structural Characterization and 90° Domain Contribution to Ferroelectricity of Epitaxial Pb(Zr0.35,Ti0.65)O3 Thin Films", J. Appl. Phys. 93(1), 545-550 (2003).
[5] Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada, and Masato Kakihana, "Ferroelectric Properties of Lanthanide-Substituted Bi4Ti3O12 Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition", J. Appl. Phys. 93(3), 1707-1712 (2003).
[6] Takayuki Watanabe, Keisuke Saito, Minoru Osada, Toshimasa Suzuki, Masayuki Fujimoto, Mamoru Yoshimoto, Atsushi Sasaki, Jin Liu, Masato Kakihana, and Hiroshi Funakubo, "Long-Range Lattice Matching between (100)/(010) Bismuth-Layered Perovskite Structure and (101) Rutile Structure", Mater. Res. Soc. Symp. Proc. 748, U2.4.1-U2.4.6 (2003).
[7] Hiroshi Funakubo, Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Keisuke Saito, Yuji Noguchi,and Masaru Miyayama, "Growth Of Epitaxial Site-Engineered Bi4Ti3O12-Based Thin Films by MOCVD and Their Characterization", Mater. Res. Soc. Symp. Proc. 748, U2.2.1-U2.2.6 (2003).
[8] Takashi Kojima, Yukio Sakashita, Takayuki Watanabe, Kazumi Kato, Hiroshi Funakubo, "Novel Candidate of c-Axis-Oriented BLSF Thin Films for High-Capacitance Condenser", Mater. Res. Soc. Symp. Proc. 748, U15.2.1-U15.2.6 (2003).
[9] Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Hitoshi Morioka, Takahiro Oikawa, and Hiroshi Funakubo, "Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition near the Morphotropic Phase Boundary", Mater. Res. Soc. Symp. Proc. 748, U13.4.1-U13.4.6 (2003).
[10] Hiroshi Uchida, Isao Okada, Hirofumi Matsuda, Takashi Iijima, Takayuki Watanabe, and Hiroshi Funakubo, "Enhancement of Remanent Polarization of BIT-Based Thin Films by Ti-Site Substitution Using Ions with Higher Charge Valences", Mater. Res. Soc. Symp. Proc. 748, U12.1.1-U12.1.11 (2003).
[11] Tetsuo Shibutami, Kazuhisa Kawano, Noriaki Oshima, Shintaro Yokoyama, and Hiroshi Funakubo, "A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer", Mater. Res. Soc. Symp. Proc. 748, U12.7.1-U12.7.6 (2003).
[12] Yoshihisa Honda, Shintaro Yokoyama, and Hiroshi Funakubo, "Characterization of PLZT Thick Film Prepared by MOCVD", Trans. Mat. Res. Soc. Jpn. 28(1), 157 (2003).
[13] G. Asano, T. Satake, K. Ohtsuki, and H. Funakubo, "Investigation of Gas-Phase Reaction Effect on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using In-situ-Monitored by Fourier Transform Infrared Spectroscopy", Proc. Electrochem. Soc. 203rd Meeting, PV 2003-08 Chemical Vapor Deposition XVI (CVD-VXI) and EUROCVD 14, 471 (2003).
[14] H. Funakubo, G. Asano, T. Ozeki, H. Machida, T. Yoneyama, and Y. Takamatsu, "Effect of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O3 Films Using Liquid-Deliver Source Supply System", Proc. Electrochem. Soc. 203rd Meeting, PV 2003-08 Chemical Vapor Deposition XVI (CVD-VXI) and EUROCVD 14, 1411 (2003).
[15] Gouji Asano, Takahiro Oikawa, and Hiroshi Funakubo, "Highly-Reproducible Preparation of Pb(Zr,Ti)O3 Films at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition", Jpn. J. Appl. Phys. 42(5A), 2801 (2003).
[16] Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, and Hiroshi Funakubo, "Crystal Structure and Ferroelectric Property of Tungsten-substituted Bi4Ti3O12 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition", Jpn. J. Appl. Phys. 42(5A), 2850 (2003).
[17] Kouji Tokita, Masanori Aratani, and Hiroshi Funakubo, "Substrate Effect on The Crystal Structure and Ferroelectricity of Low-temperature-deposited Pb(Zr,Ti)O3 Thin Films by Metalorganic Chemical Vapor Deposition", Appl. Phys. Lett. 82(23), 4122 (2003).
[18] Kenji Takahashi, Makoto Nakayama, Shintaro Yokoyama, Takeshi Kimura, Eisuke Tokumitsu, and Hiroshi Funakubo, "Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)2]4 precurcer and their properties", Appl. Surf. Sci. 216, 296 (2003).
[19] Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Hiroshi Funakubo, and Keisuke Saito, "Large remanent polarization of 100% polar-axis-oriented epitaxial Pb(Zr0.35Ti0.65)O3 thin films", Appl. Phys. Lett. 82(26), 4761 (2003).
[20] Tetsuo Shibutami, Kazuhisa Kawano, Noriaki Oshima, Shintaro Yokoyama, and Hiroshi Funakubo, "Ruthenium Films with High Nuclear Density Deposited by MOCVD Using a Novel Liquid Precursor", Electrochemical and Solid-State Lett. 6(9), C117 (2003).
[21] Satoru Kaneko, Yoshitada Shimizu, Hiroyasu Yuasa, Masahiko Mitsuhashi, Seishiro Ohya, Keisuke Saito, Kenji Takahashi, Takeshi Kimura, and Hiroshi Funakubo, "Bi2Sr2Ca1Cu2Ox Thin Film Deposition by Slower Q-Switched YAG Laser", J. Vac. Soc. Jpn. 46(5), 77 (2003).
[22] Muneyasu Suzuki, Hajime Nagata, Hiroshi Funakubo, and Tadashi Takenaka, "Piezoelectric Properties of Lanthanum Modified Bi3TiTaO9 Ceramics", Key Eng. Mater. 248, 11 (2003).
[23] Hiroshi Funakubo and Tomohiko Ozeki, "Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films", Key Eng. Mater. 248, 57 (2003).
[24] Hirofumi Matsuda, Takashi Iijima, Hiroshi Uchida, Isao Okada, Takayuki Watanabe, Hiroshi Funakubo, Minoru Osada, and Masato Kakihana, "Synthesis and Electrical Properties of Sr- and Nb-Cosubstituted Bi4-xSrxTi3-xO12 Polycrystalline Thin Films", Jpn. J. Appl. Phys. 42, 2(8A), L949 (2003).
[25] M. Takahashi, K. Kodama, M. Noda, M. Okuyama, Takayuki Watanabe, and Hiroshi Funakubo, "X-ray Photoelectron and UV Photoyield Spectroscopic Studies on SrxBiyTa2O9 Films", J. Korean Phys. Soc. 42, S1399 (2003).
[26] Hiroshi Funakubo, Tomohiro Sakai, Takayuki Watanabe, Takashi Kojima, Yuji Noguchi, Masaru Miyayama, and Minoru Osada, "Low Temperature Deposition of Bi4Ti3O12-Based Ferroelectric Thin Films Using Site Engineering Concept", "Morphotropic Phase Boundary Perovskites, High Strain Piezoelectrics, and Dielectric Ceramics", Ceramic Transactions 136, 407 (2003). The American Ceramic Society.
[27] Gouji Asano, Takahiro Oikawa, Hiroshi Funakubo, and Keisuke Saito, "Good Ferroelectricity of Pb(Zr,Ti)O3 Thin Film with Highly-Reproducibility Deposited on Ir Bottom Electrode at 395°C", Jpn. J. Appl. Phys. 42(9A/B), L1083 (2003), 42(11A), L1346(2003).
[28] Takeshi Kimura, Kensuke Akiyama, Takayuki Watanabe, Keisuke Saito, and Hiroshi Funakubo, "Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi2 Thin Film by X-ray Diffraction Measurement", Jpn. J. Appl. Phys. 42, 1(8), 4943 (2003).
[29] Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Takahiro Oikawa, Hiroshi Funakubo, Takashi Iijima, Hirohumi Matsuda, and Keisuke Saito, "Large Piezoelectric Response in (111)-oriented Epitaxial Pb(Zr,Ti)O3 Films Consisting of Mixed Phases with Rhombohedral and Tetragonal Symmetry", Appl. Phys. Lett. 83(12), 2408 (2003).
[30] Kensuke Akiyama, Seishiro Ohya, and Hiroshi Funakubo, "β-FeSi2 Thin Film Preparation by ECR Plasma-Enhanced MOCVD", Trans. Mater. Res. Soc. Jpn 28(3), 805 (2003).
[31] Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Takashi Iijima, Hirohumi Matsuda, and Hiroshi Funakubo, "Compositional Dependence of Electrical Properties of Highly (100)-/(001)-oriented Pb(Zr,Ti)O3 Thick Films Prepared on Si Substrates by Metalorganic Chemical Vapor Deposition", Jpn. J. Appl. Phys. 42(9B), 5922 (2003).
[32] Hiroshi Uchida, Keiko Sakurai, Isao Okada, Hirofumi Matsuda, Takashi Iijima, Takashi Kojima, Takayuki Watanabe, and Hiroshi Funakubo, "Electrical Properties of (Ca,Sr)Bi4Ti4O15 Thin Films Fabricated Using a Chemical Solution Deposition Method",Jpn. J. Appl. Phys., 42(9B), 5990 (2003).
[33] Shiro Hino, Makoto Nakayama, Kenji Takahashi, Hiroshi Funakubo, and Eisuke Tokumitsu, "Characterization of Hafnium Oxide Thin Films by Source Gas Pulse Introduced Metalorganic Chemical Vapor Deposition Using Amino-Family Hf Precursors", Jpn. J. Appl. Phys., 42(9B), 6015 (2003).
[34] Muneyasu Suzuki, Hajime Nagata, Jin Ohara, Hiroshi Funakubo, and Tadashi Takenaka, "Bi3-xMxTiTaO9 (M=La or Nd) Ceramics With High Mechanical Quality Factor Qm", Jpn. J. Appl. Phys., 42(9B), 6090 (2003).
[35] Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo, Yuikio Sakashita, and Takahiro Oikawa, "Capacitor Applications of c-Axis-Oriented Bismuth Layer Structured Ferroelectric Thin Films", 27th International Cocoa Beach Conference on Advanced Ceramics and Composites: B, Ceramic Engineering and Science Proceedings, Vol.24, Issue 4, 2003, 57-64, The American Ceramic Society, Jan.26-31, 2003, Cocoa Beach, Florida.
[36] Gouji Asano, Hitoshi Morioka, Hiroshi Funakubo, Tetsuo Shibutami, Noriaki Oshima, "Fatigue-free RuO2/Pb(Zr,Ti)O3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 3950C", Appl. Phys. Lett., 83(26)(2003)5506-5508.
 
※「1期生」 = 平成13年度採用研究者 2001年〜2004年
※「2期生」 = 平成14年度採用研究者 2002年〜2005年
※「3期生」 = 平成15年度採用研究者 2003年〜2006年
 
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