Research Directors and Research Themes

The device technology of a vertical body channel MOSFET with a new concept that assumes the entire body area of the device to be its current drive area is developed. The circuit technology and material/process technology for the vertical body channel MOSFET are developed. It aims to offer a new universal technological platform for semiconductor LSI to improve the driving current characteristic, the leak current characteristic, and the integration density in comparison with conventional planar type MOSFET.

http://www.cir.tohoku.ac.jp/j/2research/prof.htm#endoh

A new metrology system has been developed that is based on X-ray diffraction microscopy in the EUV region and is capable of measuring CD value and inspecting pattern defects with a high accuracy. The integration of a coherent EUV source employing a high-harmonic laser system and EUV scatterometric microscopy has enabled the construction of a practical system for CD measurement and the inspection pattern defects with subnanometer accuracy.

Ge-based devices with high electron and hole mobilities are expected for the next generation CMOS which will enable us to achieve high driving performance with a low voltage operation. It is, however, well known that Ge interfaces with dielectric films or metals are thermally or electrically unstable, so it is strongly demanded to control them based on the understanding of inherent origins behind them. This research program is to elaborately study those interfaces and to develop revolutionary methods for designing high-quality interfaces.

http://www.adam.t.u-tokyo.ac.jp/top.html

In the next-generation nano-electronics, not only electric charge current but spin and heat currents are expected to be utilized. Our aim of research is to develope the general equations of charge, spin and heat currents in nano-devices, to perform numerical simulations of the whole nano-devices based on the microscopic equations, and to clarify the interaction and conversion processes among the currents. Based on these studies, we develope novel materials and functions in the next-generation nano-electronics.

http://asrc.jaea.go.jp/soshiki/gr/mori-gr/index-e.html

There are serious issues in the high-throughput, mold release and CD control to apply nanoimprint to the manufacturing of integrated circuit. To solve the above problems, we develop the new processes and materials through the scientific elucidation to achieve the practical nanoimprint lithography.