Research Directors and Research Themes

In nanoelectronic devices, time and space are reduced to the point where fundamental events such as carrier scattering become statistical in nature. This research project is focused on understanding fluctuations in carrier transport in nanoelectronic devices, and thus developing guiding principles for reducing fluctuations in time and space under non-stationary and non-equilibrium conditions.

Ever increasing effort has been put into developing graphite-based devices. There remains, however, much to be elucidated about fundamental properties of graphite and about controlling of device properties. In this project, we unravel fundamental properties of graphene, graphite, and other nanostructures of graphene derivatives, and address practical principles for designing the novel graphite-devices based on the computational material science on the quantum physics.
http://www.px.tsukuba.ac.jp/home/tcm/okada/okada-J.html

Reliability of integrated semiconductor devices has been an issue of serious importance, since their mechanical characteristics are not clear enough while further densification is going with multi-layer wiring and three dimensional stacking structures. Guidelines for long-term reliability design will be worked out in this study by developing submicron-scale local evaluation mehotds for the mechanical strength of high density wiring and three dimensional LSI.
http://microsystemreliability.web.nitech.ac.jp/

We develop a three-dimensional injection technique of charge-less spin currents, a high-speed modulation technique of spin-current directions, and an efficient generation technique of spin currents using high quality Heusler alloy. Finally, we realize ultra-high-speed nano spin devices with very low power consumption and excellent thermal disturbance resistances.
http://inamori-frontier.kyushu-u.ac.jp/electronics/index_en.html

Three-terminal nonvolatile device 'Atom Transistor', where the source and drain electrodes are electrically connected by metal atoms (ions) supplied from the gate electrode to achieve high ON/OFF ratio, will be developed. New functional devices based on Atom Transistor will be also developed.
http://www.nims.go.jp/atom_ele_gr/index.html

We develop integrated simulators for next-generation MOS transistors. The transport model is based on the newly developed R-matrix quantum-transport theory, which greatly saves the computational time. The simulators allow us to find the optimal solution from an enormous number of options in choosing materials, device structures, and circuit design.
http://www.dma.jim.osaka-u.ac.jp/kg-portal/aspi/RX0011D.asp?UNO=11830&page=

We develop novel deposition processes by optimizing basic materials and deposition techniques in order to realize metal/oxide hybrid devices having non-volatile switching functionality.
http://unit.aist.go.jp/nano-ele/