Research Directors and Research Themes

| Adopted FY2007 | Adopted FY2008 | Adopted FY2009 |

Research Directors (Adopted FY2007)

Research of Functional-oxides and Development of Interface-Phase-Change Switching Devices

Hiro Akinaga
Director, National Institute of Advanced Industrial Science and Technology (AIST)

Electronic states and the strongly correlated phase transition of metal / insulating-oxide interfaces will be studied to construct a physical and technological framework toward functional oxide electronics. As the concrete representative, we aim at the development of non-volatile switching devices by using these interfaces.


Development of Graphene-on-Silicon Material/Device Technologies

Taiichi Otsuji
Professor, Tohoku University

We develop our original “graphene-on-silicon” (GOS) materials/process technology. Based on it, furthermore, advanced complementary switching devices (CGOS) and the plasmonresonant terahertz devices (PRGOS) will be developed. This research will lead to the realization of innovative carrier-transit-time-free, ultrafast, large-scale-integrated device technology.


Development of Nonlinear Optical Crystal for Vacuum UV Laser

Takatomo Sasaki
Specially Appointed Professor, Osaka University

The purpose of this project is to develop nonlinear optical crystal for generating VUV light at the wavelength below 180 nm in order to realize high-resolution mask and wafer inspection system. We will try to reveal the mechanism of UV laser-induced damage in nonlinear optical crystal, and to establish the shorter-wavelength and longer-lifetime VUV sources.


Spin-Based Functional MOSFET Devices Using Half-Metallic Ferromagnet

Satoshi Sugahara
Associate Professor, Tokyo Institue of Technology

In order to establish a new class of silicon integrated electronics employing spin degrees of freedom, we develop MOSFETbased functional spin-transistors using a half-metallic ferromagnet (HMF) for the source/drain (referred to as spin-MOSFETs), and hybrid devices using a MOSFET and magnetic tunnel junction with HMF electrodes (referred to as pseudo-spin-MOSFETs). Novel CMOS logic architectures based on these functional devices, such as nonvolatile logic and reconfigurable logic, are also explored.

Study on Resist Materials for Nanofabrication and Development of Process Simulator

Seiichi Tagawa
Specially Appointed Professor, Osaka University

Ionizing radiation (EUV, EB etc) is a key technology for future nanofabrication because it can deposit their energy on nanoscale region without any difficulty. Our purpose is the establishment of scientific foundation for the application of ionizing radiation to nanofabrication on industrial scale. We clarify reaction mechanisms induced in resist materials for nanofabrication by ionizing radiation. The knowledge on reaction mechanisms are applied to resist and process designs.
We develop a process simulator based on reaction mechanisms.


Three-dimensional Carbon Active Interconnects for LSI (Ended)

Mizuhisa Nihei
Fujitsu Limited

This research project focused on the development of graphene interconnect technologies to solve reliability and performance issues of LSI interconnects. We succeeded in growing multi-layer graphene, by using our original photoemission-assisted plasma-enhanced CVD method, on dielectrics without metal catalyst films.
(Research term: 1 Oct.2007 - 31 Mar.2010)

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