Akira Oiwa

Semiconductor quantum technology based on industrial-grade Ge quantum materials

Grant No.：JPMJCR24A1

Research Director

Akira Oiwa

Collaborator

Haruki Kiyama	Associate professor Graduate School and Faculty of Information Science and Electrical Engineering Kyushu University
Tetsuo Kodera	Associate Professor School of Engineering Institute of Science Tokyo

Outline

This project aim to develop the innovative quantum technologies of Ge hole-spin qubits for their large-scale integration with quantum connectivity, superconducting junctions, and electron/hole quantum optics using industrial-grade strained Ge quantum well wafers, and to bridge quantum technology developed in academic laboratries to industrial technology by adapting these technologies to semiconductor industrial processes. This project will be promoted under a strong French-Japanese collaboration, including the Laboratoire d’électronique des technologies de l’information of Commissariat à l’énergie atomique et aux énergies alternatives (CEA-Leti), a world-class research institute of semiconductor industrial fabrication.

Yutaka Ohno

Formation of non-trap interfaces in nanomaterial devices

Grant No.：JPMJCR24A2

Research Director

Yutaka Ohno

Collaborator

Shunto Arai	Independent Scientist Research Center for Macromolecules and Biomaterials National Institute for Materials Science (NIMS)
Susumu Okada	Professor Institute of Pure and Applied Sciences University of Tsukuba

Outline

To comprehensively understand the interfaces of low-dimensional semiconductors without dangling bonds on their surfaces, we aim to clarify the guiding principles of interface formation through both experimental and theoretical approaches. In particular, by not only ensuring the cleanliness of the surfaces but also introducing insulating materials that lack dangling bonds, we will aim to establish non-trap interface formation technology. Ultimately, we will demonstrate the application of this technology in low-noise amplification circuits that benefit flexible sensors.

Kosuke Nagashio

Establishment of wafer-scale vdW epitaxy and construction of process technology for 2D-CMOS integration

Grant No.：JPMJCR24A3

Research Director

Kosuke Nagashio

Collaborator

Vincent Tung	Professor School of Engineering The University of Tokyo
Takahiro Nagata	Group leader Research Center for Electronic and Optical Materials National Institute for Materials Science

Outline

In this project, we propose to grow single crystals of N-type MoS2 and P-type WSe2 on a c-plane sapphire substrate by vdW epitaxy, and to demonstrate CMOS inverter operation. Our goal is to achieve a mobility of 50 cm2/Vs or more, which is an indicator of crystallinity, and a gain of 100 or more at Vdd=1V, which is an indicator of CMOS inverter operation.

Yuhei Hayamizu

The Development of Graphene Biosensors Based on Peptide Interface Technology

Grant No.：JPMJCR24A4

Research Director

Yuhei Hayamizu

Collaborator

Takahisa Tanaka	Associate Professor Faculty of Science and Technology Keio University
Takeshi Fukuma	Director・Professor Nano Life Science Institute Kanazawa University

Outline

Existing biosensors have difficulty detecting low-molecular-weight, nonpolar molecules like odor molecules with high sensitivity and selectivity. While graphene can detect nonpolar molecules with high sensitivity, it requires surface modification techniques to improve target selectivity and prevent nonspecific detection. This research aims to develop a high-performance graphene biosensor based on a new signal transduction mechanism using peptide surface modification technology, with the goal of realizing digital olfaction technology.

Kazunari Matsuda

Construction and application of quantum optical platforms based on two-dimensional semiconductors and heterostructures

Grant No.：JPMJCR24A5

Research Director

Kazunari Matsuda

Collaborator

Susumu Okada	Professor Institute of Pure and Applied Sciences University of Tsukuba
Junko Ishi-Hayase	Professor Faculty of Science and Technology Keio University
Kenji Watanabe	Researcher Research Center for Electronic and Optical Materials National Institute for Materials Science

Outline

We define two-dimensional semiconductor quantum optical platforms as a new pathway for optical science and technology in two-dimensional semiconductors, 1) a single quantum two-level system defined by defects in wide-gap two-dimensional semiconductors and 2) a huge number of integrated quantum two-level systems with moire excitons in transition-metal dichalcogenides. We explore and promote the scientific applications of new two-dimensional semiconductor quantum optical platforms.