[Nano-material semiconductors] Year Started : 2023

Ayumi Ishii

Development of novel photofunctional devices based on one-dimensional helical nanomaterials with organic-inorganic hybrid

Grant No.:JPMJCR23A1
Research Director
Ayumi Ishii

Associate Professor
Faculty of Science and Engineering
Waseda University

Collaborator
Tetsuaki Itou Professor
Faculty of Advanced Engineering
Tokyo University of Science
Shinnji Tanaka Senior Researcher
Interdisciplinary Research Center for Catalytic Chemistry
National Institute of Advanced Industrial Science &Technology
Tatsuki Tahara Senior Researcher
Radio Research Institute
National Institute of Information and Communications Technology
Outline

This project will establish fundamental technologies for new photofunctional functions and devices based on one-dimensional helical inorganic nanomaterials with unique electronic and spin states, which is controlled by organic-inorganic hybrid structures. The electronic states and optical functions induced by one-dimensional helical arrangements with broken spatial inversion symmetry and strong spin-orbit interactions (circularly polarized light detection, bulk photovoltaics, and photocurrent-induced magnetism) will be used to develop next-generation optical semiconductor devices (multi-dimensional optical imaging system, ultra high-power solar cells, and ultra energy-saving information processing devices).

Toshiaki Kato

Development of graphene-based standard quantum limit amplifier with interface-controlled direct growth method

Grant No.:JPMJCR23A2
Research Director
Toshiaki Kato

Associate Professor
Graduate School of Engineering
Tohoku University

Collaborator
Tomohiro Otsuka Associate Professor
Advanced Institute for Materials Research, Research Institute of Electrical Communication
Tohoku University
Kouichi Semba Project Professor
Graduate School of Science
The University of Tokyo
Fumiki YOSHIHARA Professor
Faculty of Science
Tokyo University of Science
Outline

In this study, we attempt to develop basic technology for fabrication of graphene-based standard quantum limit (SQL) amplifier by improving our direct fabrication method of graphene devices. Since the SQL amplifier can amplify a signal with keeping ultra-low noise level, it can be expected to be utilized in future quantum devices such as a quantum computer by drastically improving SQL amplifier performances with graphene.

Masaharu Kobayashi

Nanosheet oxide semiconductor for 3D integrated memory devices

Grant No.:JPMJCR23A3
Research Director
Masaharu Kobayashi

Associate Professor
Graduate School of Engineering
The University of Tokyo

Collaborator
Mutsunori Uenuma Principal researcher
Sensing system research center
Advanced Industrial Science and Technology
Yukiharu Uraoka Professor
Graduate School of Science and Technology
Nara Institute of Science and Technology
Outline

In this research, we aim at developing atomic layer deposition process for nanosheet oxide semiconductor, exploring physics and interface properties in nanosheet oxide semiconductor devices, and demonstrate 3D integrated memory devices. Experts of material/process, device, characterization, theoretical calculation in the field of oxide semiconductor and nanoelectronics collaborate and achieve the research goals.

Taishi Takenobu

Ultra-high-density carrier control in two-dimensional materials

Grant No.:JPMJCR23A4
Research Director
Taishi Takenobu

Professor
Graduate School of Engineering
Nagoya University

Collaborator
Wen Hsin Chang Senior Researcher
Semiconductor Frontier Research Center
National Institute of Advanced Industrial Science and Technology
Kaori Hirahara Professor
Graduate School of Engineering
Chiba University
Mina Maruyama Assistant Professor
Institute of Pure and Applied Sciences
University of Tsukuba
Yasumitsu Miyata Associate Professor
Graduate School of Science
Tokyo Metropolitan University
Outline

We will establish area- and type-selective high-density carrier doping techniques for two-dimensional materials, such as monolayers and in-plane and out-of-plane heterostructures, focusing on transition metal chalcogenides. Based on these techniques, we aim to establish the sciences of metal/semiconductor junctions and PN junctions in two-dimensional materials and to realize functional devices based on them.

Katsuhiro Tomioka

3D integrated quantum electronics and circuits using vertical semiconductor nanowire array

Grant No.:JPMJCR23A5
Research Director
Katsuhiro Tomioka

Associate Professor
Graduate School of Information Science and Technology
Hokkaido University

Collaborator
Koji Inoue Professor
Graduate School and Faculty of Information Science and Electrical Engineering
Kyushu University
Kohei Hamaya Professor
Graduate School of Engineering Science
Osaka University
Outline

Based on III-V nanowires and their heterostructures, we develop novel 3D integrated circuit technologies including new devices, processes, and circuit architecture toward realization of ultra-low power electronics and their society.

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