Nonvolatile Nanoelectronics Based on Heterostructures of Ferroelectrics and Functional Oxides

Presto Researcher

Hiroyuki Yamada

National Institute of Advanced Industrial Science and Technology (AIST) Electronics and Photonics Research Institute
Senior Researcher

Research Outline

In this project, we develop a new type of resistive switching memory device based on leak current (tunnel effect) in ultrathin ferroelectric films. We focus on heterointerfaces composed of ferroelectric oxides and electrodes, in order to elucidate the role of interfacial electronic states on the switching phenomena. The functionalities of the interfaces will be further optimized by integrating various kinds of functional oxides, which will realize the high performance non-volatile memory.

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