Proposal Papers for Policy Making and Governmental Action toward Low Carbon Society

LCS-FY2019-PP-05

Technological Issues and Future Prospects of GaN and Related Semiconductor Devices (Vol. 4):
Manufacturing Cost of GaN Power Device

  • SDGs7
  • SDGs9
  • SDGs11
  • SDGs13
  • SDGs12

Summary

 The GaN MOSFET manufacturing cost was estimated by a simplified manufacturing process. The 10mm chip manufacturing cost was estimated to be 16,000~20,000 JPY / piece when using a 4-inch GaN substrate (400,000 JPY / piece). At present, the cost of the substrate accounts for nearly 60% of the manufacturing cost, so it is important to reduce the substrate price.

 If technical issues can be cleared as described in the previous report, the GaN single crystal substrate cost may be reduced to about 10,000 JPY per inch. In this case, a 10 mm chip of GaN MOSFET would cost about 5,000 JPY. In addition, technology that makes full use of cheaper substrates, such as SiC substrates, is also an issue to be studied.
 Since the epitaxial growth equipment accounts for 50% of the equipment cost, it is important to reduce the cost of this process. For this reason, the use of a large-diameter substrate, a large number of substrates, and a reduction in production time, p-layer formation technology, etc. are the issues to be studied. In addition, it will be important to develop the process of markedly higher productivity than the present, the efficient p-layer forming method, and the new device structure in the future.

All Pages

Related Proposal Papers