Proposal Papers for Policy Making and Governmental Action toward Low Carbon Society

LCS-FY2017-PP-11

Technological Issues and Future Prospects of GaN and Related Semiconductor Devices (Vol. 2):
Manufacturing Costs of GaN Crystals and Substrates

Summary

 GaN and related semiconductor devices have attracted attention in the application area of laser diodes, high luminance LEDs, and power devices.

 Commercialization of these devices has been difficult due to the unusually high prices of GaN substrates on which the devices are formed, because GaN is one of the material hard to grow single crystals. HVPE (Hydride Vapor Phase Epitaxy), ammonothermal, and flux method will be evaluated in view of the present crystal growth technology level, hurdles for realization, and the presumable future manufacturing cost when the hurdles are cleared.

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