Basic information of the Research Area

[Nano-material Semiconductors]Fundamental Technology for Semiconductor-Device Structures Using Nanomaterials

Research Supervisor

Riichiro SaitoEmeritus Professor, Tohoku University

Strategic Objective

Fundamental technologies for utilizing low-dimensional materials in new semiconductor device structures

Overview

Based on the 2023 strategic objective "Fundamental technology for utilizing low-dimensional materials towards new semiconductor device structures", this research area will establish fundamental technologies for semiconductor devices by using two-dimensional materials such as graphene and transition metal dichalcogenide or one-dimensional materials such as nanotubes and nanowires (hereafter nanomaterials).
Fundamental technologies here refer to technologies and principles that have a significant ripple effect in improving the productivity. More specifically, it refers to the creation of semiconductor wafers and devices using nanomaterials and the construction of operating circuits, as well as the operating principles of nanomaterial-specific devices. The subject areas should include nanomaterial-based semiconductors. The scope includes field-effect transistor (FET) logic circuits, flexible devices, pn/heterojunction devices, thermoelectric devices, solar cells, light-emitting diode (LED) and light-receiving devices, THz far-infrared devices, chemical/biological sensors, artificial muscles, MEMS/NEMS and various other devices. The aim is to comprehensively construct not only individual elements but also circuits and systems, and to build a bridge over “the valley of death” (a term that symbolizes the difficulties between basic research and industrialization) towards practical use.
In order to build a system, a cross-disciplinary fusion team is formed between researchers with proven research experience to provide nanomaterial samples, device production and circuit configuration in the first half of the research period, as well as process technology and basic science to create innovative semiconductor platform technology directly linked to practical applications over the period.

Research Area’s website

Research Area Advisors

Click here to see the List of Research Area Advisors

Schedule of Selection Process

Deadline for application 2025/06/03 at 12:00 noon, Japan time
Document-based review 2025/7/10
JST will contact to the interviewees no later than 2025/7/17
Interview-based review(ONLINE)
※Interview date and time will be assigned by JST.

(Added on May 21, 2025) Interview date has been changed from July 25th to August 1st.

2025/7/25
2025/8/1

Research Supervisor's Policy

Research Supervisor's Policy of this Research Area can be downloaded from below.

Japanese-French (JST-ANR) Joint Research Calls

In FY2025, JST has agreed with ANR to establish the following two CREST Research Areas as common priority research areas and to invite Japanese-French joint research proposals, as well as regular (non-joint) proposals:

[Nano-Material Semiconductors] Fundamental Technology for Semiconductor-Device Structures Using Nanomaterials
[Prediction Mathematical Foundation] Creation of Mathematical Foundation for Prediction and Control

Excellent joint research projects, in which complementarities of research expertise and synergetic effects of research groups of the two countries can be expected, are highly welcome to apply. For selected joint research projects, JST(CREST) will fund Japanese research groups and ANR will fund French research groups in accordance with the regulations and policies applicable to each agency.

Application Process

To apply, principal investigators (PIs) from the Japanese and French sides will write a common joint research proposal and submit it to JST and ANR in parallel.

  1. The joint research proposal should be written in English using the Common Application Form.
  2. PI from French side will apply and submit the common joint research proposal to ANR.
  3. PI from Japanese side will apply and submit the common joint research proposal to CREST via the e-RAD system.
  4. JST and ANR will evaluate proposals in parallel and make common funding decisions.
  5. Funded research projects will start in October or later.

Attentions