Research of Innovative Material and Process for Creation of Next-generation Electronics Devices

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October 24, 2011: The International Symposium "Frontier of Functional-Oxide Nano Electoronics" will be held at NIMS,Sengen site,
Tsukuba, Japan on November 10-11th, 2011 by Akinaga Research Team, Hasegawa Research Team, and Yuasa Research Team.
For details, please visit the following website.
http://www.superior-nano.jp/crest_foe/WS2011/
March 3, 2011: Dr. Otani and others (Okada Research Team),
published theoritical study result, "Semiconducting electronic property of graphene" " (Press Japanese only)
http://www.jst.go.jp/pr/announce/20110303/index.html
December 24, 2010: Principal Investigator Hasegawa Tsuyoshi and others (Hasegawa Research Team),
succeeded to develop Volatile/Nonvolatile Dual-Functional Atom Transistor (Press Japanese only)
http://www.jst.go.jp/pr/announce/20101224/index.html
December 8, 2010: Professor Akira Toriumi and others (Toriumi Research Team),
succeeded to demonstrate the highest electron (1920 cm2/Vs) and
hole mobility (725 cm2/Vs) in Ge MOSFETs (Press Japanese only)
http://www.jst.go.jp/pr/announce/20101208-2/index.html
October 29,2010: The International Symposium on Graphene Devices: Technology, Physics,
and Modeling (2nd ISGD 2010) was held at the RIEC,Tohoku University,
Sendai, Japan on October 27-29th, 2010 by Otsuji Research Team.
For details, please visit the following website.
http://www.otsuji.riec.tohoku.ac.jp/CREST/ISGD2010/
June 18, 2010: Professor Akira Toriumi and others (Toriumi Research Team),
succeeded to demonstrate the highest electron mobility to date
in Ge n-MISFET.(Press Japanese only)
http://www.jst.go.jp/pr/announce/20100618/index.html

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