[Masaharu Kobayashi] Reseach and development of steep slope transistor using negative capacitance of gate insulator for ultralow power operation and its application to nanowire structure

Research Director

Masaharu Kobayashi

Masaharu Kobayashi

Institute of Industrial Science, The University of Tokyo
Associate Professor

Outline

In this work, we will demonstrate first negative capacitance transistor (NCFET) with ferroelectric HfO2 thin film by establishing device design and developing material for ultralow power operation. A physics based device simulator will be developed for device design. Ferroelectric HfO2 material process will be also developed. The ferroelectric HfO2 thin film will be integrated in CMOS device process and applied to nanowire structure.

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