Research Project Outline
Fabrication technology of crystalline silicon (c-Si) solar cells with energy conversion efficencies over 25 % is studied, based on Cat-CVD (Hot-Wire CVD) technology. Cat-CVD preparation of high-quality thin films without damages can realize extremely low surface recombination velocity, and dopant radicals generated in Cat-CVD system can make p-n junction only at 200℃: or less. They contribute to dramatic improvement of c-Si solar cell efficiency.