Next-generation power inverter based on interface-controlled GaN high-electron-mobility transistors

Research Project Outline

We intend to establish fundamental and elemental technologies for a high-performance GaN power inverter that will act as a core device in energy saving technologies. The research includes characterization of defect-origin electronic levels in GaN-based materials and their correlation with operation instabilities of devices, development of a novel high-electron-mobility transistor (HEMT) based on a multi-mesa-channel structure with hetero-interface control, and design and simulation of power inverters utilizing the GaN HEMT. This will open up a key technology for a next-generation power inverter system.