HOME > Research Areas by Category > Photonics and Quantum Optics... > Research on InN Semiconductor...

Research on InN Semiconductor Laser Diodes with High Temperature-Stability for Optical Communication Systems

Research Project Outline

To advance the information society, the development of highcapacity, cost-effective optical communications systems is desired. For this purpose, as a light source, a laser diode with temperature stability is needed. We have found that InN, a component of nitride semiconductors used in blue LEDs, emits infrared light whose wavelength is stable against temperature change. This laser has environmental advantages because it does not contain arsenic or phosphor. This project seeks to fabricate laser diodes with an InN emitting layer for optical communications systems.

Research Director
TakashiMatsuoka
Affiliation
Professor, Tohoku University
Research Started
2006
Status
ongoing
Research Area
Photonics and Quantum Optics for the Creation of Innovative Functions
Research Areas by Category
Research Areas Completed
Researcher Index
Search