Characteristic variations due to random discrete dopant and atomic disorder in silicon nanowire transistors have been investigated using a R-matrix-based non-equilibrium Green's function method. The method greatly saves the computation time and could be applied to the design of nanowire-based devices and circuits.
Researcher Information
CREST
Research Area : "Research of Innovative Material and Process for Creation of Next-generation Electronics Devices"
Research Theme : "Development of integrated simulators from atomistic theory to compact model"
Journal Information
Nano-device Simulation from an Atomistic View
2013 IEEE International Electron Devices Meeting Technical Digest pp.
116-119
Contact
[About Research]
Nobuya Mori
Graduate School of Engineering, Osaka University
2-1 Yamada-oka, Suita City, Osaka 565-0871, Japan
Tel: +81-6-6879-7698, Fax: +81-6-6879-7698
E-mail: 
HP: http://www.osaka-u.ac.jp/en/index.html
HP: https://sites.google.com/site/morinobuya/