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JST Press Release

Sep. 26, 2013
Japan Science and Technology Agency (JST)
5-3, Yonbancho, Chiyoda-ku, Tokyo 102-8666
URL http://www.jst.go.jp/EN/index.html

Design for Highly Efficient Silicon-Based Solar Cells Using Quantum Dots as Intermediate Absorber

Quantum dots have attracted much attention for use in photovoltaic applications because of their potential for overcoming the limits of current efficiency records of about 30%. We have demonstrated a systematic analysis in the silicon-based solar cells using quantum dots as intermediate absorber, and provided design principles for highly-efficient quantum dot solar cells. Our findings will open the way to explore the novel photovoltaic concepts in silicon-based nanostructured solar cells.

Researcher Information

Research Area: "Photoenergy conversion systems and materials for the next generation solar cells"
Research Theme: "Controlling of the many-body interaction between photoexcited carriers toward hot carrier solar cells"

Journal Information

Takeshi Tayagaki, Yusuke Hoshi, and Noritaka Usami
“Investigation of the open-circuit voltage in solar cells doped with quantum dots”
Scientific Reports, Published online 26 September 2013
doi: 10.1038/srep02703


[About Research]
Takeshi Tayagaki, Ph.D.
Associate Professor, Institute for Chemical Research, Kyoto University

[About Program]
Masashi Furukawa, Fumiharu Kimura, Natsuko Kawazoe
Green Innovation Group, Department of Innovation Research, JST


JST, an integrated organization of science and technology in Japan, establishes an infrastructure for the entire process from the creation of knowledge to the return to the society. For more information, visit http://www.jst.go.jp/EN/