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JST Press Release

27th June 2013
Japan Science and Technology Agency (JST)
5-3, Yonbancho, Chiyoda-ku, Tokyo 102-8666
URL http://www.jst.go.jp/EN/index.html

A new type of miniature silicon laser with a microwatt threshold

For the last half-century, countless challenges have been performed for developing compact silicon lasers since it promise a wide range of applications. Finally, we achieved continuous-wave Raman Si laser using a photonic-crystal high-Q nanocavity where an amazingly low threshold of 1μW was obtained in a 10-μm length cavity. We designed a unique high-Q nanocavity to bring out the tremendous potential. Our demonstration provides routes to making practical silicon lasers or amplifiers toward photonic integrated circuits on CMOS compatible chips.

Researcher Information

JST PRESTO Research Area : “Materials and processes for Innovative next-generation devices”
Research Theme :“Silicon Raman Laser using Photonic Crystal Nanocavity”

Journal Information

Yasushi Takahashi, Yoshitaka Inui, Masahiro Chihara, Takashi Asano, Ryo Terawaki, and Susumu Noda.
“A micrometre-scale Raman silicon laser with a microwatt threshold”
Nature vol.498, p470-474
doi: 10.1038/nature12237


[About Research]
Yasushi Takahashi, Ph.D.
Associated Professor, Research Organization for the 21st century, Osaka Prefecture University,
HP: http://www.nanosq.21c.osakafu-u.ac.jp/ttsl/en/en_y_takahashi.html

[About Program]
Fumiharu Kimura
ICT Group, Department of Innovation Research
Japan Science and Technology Agency (JST)


JST, an integrated organization of science and technology in Japan, establishes an infrastructure for the entire process from the creation of knowledge to the return to the society. For more information, visit http://www.jst.go.jp/EN/