For the last half-century, countless challenges have been performed for developing compact silicon lasers since it promise a wide range of applications. Finally, we achieved continuous-wave Raman Si laser using a photonic-crystal high-Q nanocavity where an amazingly low threshold of 1μW was obtained in a 10-μm length cavity. We designed a unique high-Q nanocavity to bring out the tremendous potential. Our demonstration provides routes to making practical silicon lasers or amplifiers toward photonic integrated circuits on CMOS compatible chips.
JST PRESTO Research Area : “Materials and processes for Innovative next-generation devices”
Research Theme :“Silicon Raman Laser using Photonic Crystal Nanocavity”
Yasushi Takahashi, Yoshitaka Inui, Masahiro Chihara, Takashi Asano, Ryo Terawaki, and Susumu Noda.
“A micrometre-scale Raman silicon laser with a microwatt threshold”
Nature vol.498, p470-474
Yasushi Takahashi, Ph.D.
Associated Professor, Research Organization for the 21st century, Osaka Prefecture University,
ICT Group, Department of Innovation Research
Japan Science and Technology Agency (JST)