New Formation Process of Solar-Grade Si Material Based on Atmospheric-Pressure Plasma Science

Research Project Outline

In this research, a new manufacturing process of solar-grade Si directly from low-cost, low-purity Si materials is developed using high-pressure H2 plasma generated at near atmospheric pressure. By clarifying fundamental phenomena occurring in the high-pressure plasma and on the Si surface at an atomic level, we establish a technique to control plasma and surface reactions, and enhance the silane generation reaction from low-purity Si materials. It is expected that this process significantly contributes to the solution against the shortage problem of solar-grade Si, and to the large reduction of the manufacturing cost of solar cells.

Research Director
Professor, Osaka University
Research Started
Research Area
Creative research for clean energy generation using solar energy
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