Development of Single Electron Devices by Highly Precise Bottom-up Processes

Research Project Outline

We develop the novel single electron devices by using highly precise three bottom-up processes. First, nanogap electrodes with 5 nm or less in gap separation are fabricated by electro-less plating with a self termination process. Second, metal clusters and molecular wires using metal complexes are syn-thesized for a use as Coulomb islands. Third, the synthesized Coulomb islands are selectively integrated into the nanogaps. By using these highly precise bottom-up processes, we dem-onstrate a single electron device operation at room tempera-ture and establish fabrication processes toward a logic cir-cuit.

Research Director
Professor, Tokyo Institute of Technology
Research Started
Research Area
Establishment of Innovative Manufacturing Technology Based on Nanoscience
Research Areas by Category
Research Areas Completed
Researcher Index