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Development of 230-350nm Band InAlGaN-based High-efficiency Deep-UV Emitting Devices

Research Project Outline

High-brightness deep-ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) with emission wavelengths in the range of 230-350 nm have a wide range of potential applications, such as in water purification, sterilization, medicine and biochemistry, white light illumination, and light sources for high density optical recording. In this study, we will develop a crystal growth technique of nitride InAlGaN based semiconductors for obtaining deep-UV emitting devices, and achieve 230-250 nm band high-efficiency deep-UV LEDs and LDs.

Research Director
Team Leader, RIKEN
Research Started
Research Area
Photonics and Quantum Optics for the Creation of Innovative Functions
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