革新的研究開発推進プログラム ImPACT

The 3rd ImPACT International Symposium on Spintronic Memory,Circuit and Storage

Recently, emerging nonvolatile-memories with low power consumption
(MRAM, ReRAM, PC-RAM, and so on) have been developed actively and their production is going to be launched onto the market.
Among them, MRAM has received much attention with the infinite endurance, excellent data-retention characteristics and extremely
low power consumption with the drastic progress of the materials,
device structures and processes for a new writing scheme.
The main subject of this symposium is to open the door for
New Technology Trends, that is to say, Advancing “Emerging Nonvolatile-Memory” Technologies and their application to
cyber physical systems (CPS), the internet of things (IoT),
data science, deep learning and so on. Moreover, we discuss the substantial challenge to implement extremely high speed and integration in the next generation nonvolatile-memories.

Program

Organized by [IMPACT] SAHASHI program, Japan Science and Technology Agency