We developed a new segmented type detector for scanning transmission electron microscopy. Using this detector, we show that we can directly and quantitatively image a built-in electric field at a p-n junction in compound semiconductor at nanometer dimensions. This new ability to directly image local electric field distribution inside semiconductor devices at very high resolution will be of very powerful for characterizing and understanding the properties of new materials and devices.
Research Area “Phase Interfaces for Highly Efficient Energy Utilization”
Research Theme “Development of atomic-resolution electromagnetic field imaging electron microscopy for interface analysis”
Naoya Shibata, Scott D. Findlay, Hirokazu Sasaki, Takao Matsumoto, Hidetaka Sawada, Yuji Kohno, Shinya Otomo, Ryuichiro Minato, and Yuichi Ikuhara. “Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy”. Scientific Reports, 5, 10040(2015), doi: 10.1038/srep10040.
Naoya Shibata, Ph.D.
Associate Professor, Institute of Engineering Innovation, The University of Tokyo
Green Innovation Group, Department of Innovation Research, JST