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JST Press Release

June 12, 2015
Japan Science and Technology Agency (JST)
5-3, Yonbancho, Chiyoda-ku, Tokyo 102-8666

New advance in electron microscopy - Direct imaging and quantification of electric fields formed at a p-n junction in semiconductors

We developed a new segmented type detector for scanning transmission electron microscopy. Using this detector, we show that we can directly and quantitatively image a built-in electric field at a p-n junction in compound semiconductor at nanometer dimensions. This new ability to directly image local electric field distribution inside semiconductor devices at very high resolution will be of very powerful for characterizing and understanding the properties of new materials and devices.

Researcher Information

Research Area “Phase Interfaces for Highly Efficient Energy Utilization”
Research Theme “Development of atomic-resolution electromagnetic field imaging electron microscopy for interface analysis”

Journal Information

Naoya Shibata, Scott D. Findlay, Hirokazu Sasaki, Takao Matsumoto, Hidetaka Sawada, Yuji Kohno, Shinya Otomo, Ryuichiro Minato, and Yuichi Ikuhara. “Imaging of built-in electric field at a p-n junction by scanning transmission electron microscopy”. Scientific Reports, 5, 10040(2015), doi: 10.1038/srep10040.


[About Research]
Naoya Shibata, Ph.D.
Associate Professor, Institute of Engineering Innovation, The University of Tokyo
URL: http://interface.t.u-tokyo.ac.jp/english/index.html

[About Program]
Masashi Furukawa
Green Innovation Group, Department of Innovation Research, JST


JST, an integrated organization of science and technology in Japan, establishes an infrastructure for the entire process from the creation of knowledge to the return to the society. For more information, visit http://www.jst.go.jp/EN/