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| 1) |
小野島紀夫、須田淳、松波弘之 |
| ２次元初期成長の実現によるによるSiC(0001)基板上高品質AlN層の結晶性向上 |
| 応用物理学会(2003年春期) |
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| 2) |
N. Onojima, J. Suda and H. Matsunami |
| High-quality AlN by initial layer-by-layer growth on surface-controlled 4H-SiC(0001) substrate |
| JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 (5A): L445-L447 |
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| 3) |
N. Onojima, J. Suda and H. Matsunami |
| Growth of high-quality non-polar AlN on 4H-SiC (11-20) substrate by molecular-beam epitaxy |
| 第5回窒化物半導体国際会議(ICNS5) |
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| 4) |
N. Onojima, J. Suda and H. Matsunami |
| Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy |
| 第5回窒化物半導体国際会議(ICNS5) |
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| 5) |
須田淳、小野島紀夫、木本恒暢、松波弘之 |
| 界面制御によるSiC基板上AlN成長層の高品質化および新規面方位SiC上へのAlNの成長 |
| 第33回結晶成長国内会議(NCCG-33) |
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| 6) |
小野島紀夫、須田淳、木本恒暢、松波 弘之 |
| ポリタイプ整合による4H-SiC(11-20)基板上の高品質4H-AlN |
| 応用物理学会(2003年秋期) |
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| 7) |
神谷慎一、小野島紀夫、須田淳、木本恒暢、松波弘之 |
| 6H-SiC基板上MBE成長におけるAlN緩衝層とGaN成長層の結晶性の関係 |
| 応用物理学会(2003年秋期) |
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| 8) |
小野島紀夫、海藤淳司、須田淳、木本恒暢、松波弘之 |
| rf-MBE法により形成したAlN/4H-SiC (0001) 界面の電子物性 |
| 応用物理学会(2003年秋期) |
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| 9) |
N. Onojima, J. Kaido, J. Suda, T. Kimoto and H. Matsunami |
| Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy |
| 2003年シリコンカーバイドおよび関連材料に関する国際会議(International Conference on Silicon Carbide and Related Materials 2003, ICSCRM2003) |
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| 10) |
J. Suda, N. Onojima, T. Kimoto and H. Matsunami |
| Step-Flow or Layer-by-Layer Growth for AlN on SiC(0001) Substrates |
| Material Research Society Fall Meeting 2003 |
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| 11) |
N. Onojima, J. Suda and H. Matsunami |
| Growth of high-quality non-polar AlN on 4H-SiC (11-20) substrate by molecular-beam epitaxy |
| physica status solidi (c) Volume 0, Issue 7, Pages: 2502-2505 |
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| 12) |
N. Onojima, J. Suda and H. Matsunami |
| Impact of SiC surface control on initial growth mode and crystalline quality of AlN grown by molecular-beam epitaxy |
| physica status solidi (c) Volume?0, Issue?7, Pages:?2529-2532 |
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| 13) |
Onojima N, Suda J, Kimoto T, Matsunami H |
| 4H-polytype AlN grown on 4H-SiC(11-20) substrate by polytype replication |
| Appllied Physics Letters 83 (2003), 5208-5210. |
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| 14) |
N. Onojima, J. Suda and H. Matsunami |
| Growth of AlN (11(2)over-bar0) on 6H-SiC (11(2)over-bar0) by molecular-beam epitaxy |
| JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 41 (12A): L1348-L1350 |
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| 15) |
須田淳 |
| Effect of surface control of SiC (0001) substrate on heteroepitaxial growth of AlN |
| 日本学術振興会「結晶加工と評価技術」第145委員会 第99回研究会 「ワイドギャップ系半導体の結晶工学とデバイス」 |
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| 16) |
小野島紀夫、海藤淳司、須田淳、木本恒暢 |
| Correlation between interface structure and electronic properties of AlN/4H-SiC(0001) |
| 応用物理学会(2004年春期) |
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| 17) |
中野佑紀、須田淳、木本恒暢 |
| Direct growth of n-GaN on p-4H-SiC for GaN/SiC HBT |
| 応用物理学会(2004年春期) |
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| 18) |
堀田昌宏、小野島紀夫、須田淳、木本恒暢 |
| CL measurement of AlN grown on 4H-SiC (0001) and (11-20) |
| 応用物理学会(2004年春期) |
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| 19) |
N. Onojima, J. Kaido, J. Suda, T. Kimoto and H. Matsunami |
| Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy |
| Materials Science Forum vol.457-460: 1569-1572, 2004 |
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| 20) |
Masahiro Horita, Norio Onojima, Jun Suda and Tsunenobu Kimoto |
| Cathodoluminescence study of AlN grown on 4H-SiC (11-20) |
| 第23回電子材料シンポジウム(EMS-23) |
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| 21) |
Jun Suda, Norio Onojima and Tsunenobu Kimoto |
| Heteroepitaxial Growth of AlN on SiC - Stacking Mismatch |
| 第23回電子材料シンポジウム(EMS-23) |
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| 22) |
N. Onojima, J. Kaido, J. Suda, T. Kimoto |
| Molecular-beam epitaxy of AlN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface |
| 窒化物半導体国際ワークショップ2004 International Workshop on Nitride Semiconductors 2004 (IWN2004) |
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| 23) |
Y. Nakano, J. Suda, T. Kimoto |
| Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor |
| 窒化物半導体国際ワークショップ2004 International Workshop on Nitride Semiconductors 2004 (IWN2004) |
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| 24) |
J. Suda, M. Horita, N. Onojima and T. Kimoto |
| Heteroepitaxial Growth of AlN on SiC |
| High-tech research technical meeting on Hybrid Nanostructured Materials and Its Applications 2004 |
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| 25) |
須田淳、木本恒暢 |
| Control of interface properties of AlN/SiC and its application on AlN/SiC MISFET |
| 応用電子物性分科会研究例会 「窒化アルミニウム―結晶・プロセス・デバイスの最前線―」 |
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| 26) |
Jun Suda, Yuki Nakano and Tsunenobu Kimoto |
| Influence of Substrate Misorientation Angle and Direction in Molecular-Beam Epitaxial Growth of GaN on Off-Axis SiC |
| Material Research Society Fall Meeting 2004 |
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| 27) |
J. Suda, M. Horita, N. Onojima and T. Kimoto |
| Heteroepitaxial Growth of AlN on SiC |
| Hybrid Nanostructured Materials and Their Applications, Eds. T. Ohachi, A. S. Somintac and M. Wada (ISBN4-9902429-0-4) |
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| 28) |
Robert Armitage, 須田淳、木本恒暢 |
| Growth of Nonpolar GaN and AlN Epilayers on 4H-SiC (1-100) substrates |
| 応用物理学会(2005年春期) |
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| 29) |
中野佑紀、島田翔太、須田淳、木本恒暢 |
| Fabrication and Characterization of GaN/SiC Hetero-junction Bipolar Transistors |
| 応用物理学会(2005年春期) |
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| 30) |
N. Onojima, J. Kaido, J. Suda, T. Kimoto |
| Molecular-beam epitaxy of AlN on off-oriented SiC and demonstration of MISFET using AlN/SiC interface |
| physica status solidi (c) Volume 2, Issue 7, Pages: 2643-2646 |
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| 31) |
Y. Nakano, J. Suda, T. Kimoto |
| Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor |
| physica status solidi (c) Volume 2, Issue 7, Pages: 2208-2211 |
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| 32) |
Masahiro Horita , Jun Suda and Tsunenobu Kimoto |
| Impact of III/V ratio on polytype and residual strain of AlN grown on 4H-SiC (11-20) substrate by molecular-beam epitaxy |
| 第24回電子材料シンポジウム(EMS-24) |
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| 33) |
Masahiro Horita , Jun Suda and Tsunenobu Kimoto |
| Impact of III/V ratio on polytype and residual strain of AlN grown on 4H-SiC (11-20) substrate by molecular-beam epitaxy |
| 第6回窒化物半導体国際会議 6th International Conference on Nitride Semiconductors (ICNS6) |
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| 34) |
R. Armitage, J. Suda and T. Kimoto |
| Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy |
| 第6回窒化物半導体国際会議 6th International Conference on Nitride Semiconductors (ICNS6) |
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