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Formation of high-quality polycrystalline silicon films on glass substrates by flash-lamp-induced crystallization
Keisuke Ohdaira
Associate Professor, Green Devices Research Center, Japan Advanced Institute of Science and Technology (JAIST)
http://www.jaist.ac.jp/ms/labs/ohdaira/home_e.htm
Abstract
Flash lamp annealing can form poly-crystalline silicon (poly-Si) films a few µm thick on conventional glass substrates. This crystallization progresses laterally, leaving behind characteristic periodic structures. In this study, I will clarify the mechanism of this curious crystallization and an association between the periodic structure and solar cell properties, aiming at the establishment of fundamental technologies to realize thin-film poly-Si solar cells with conversion efficiency of more than 15%.