Kyoto University, Institute for Chemical Research, Assistant Professor
Magnetization switching is used as an information writing method in magnetic storage devices such as hard discs and magnetic non-volatile memories. Further reduction of power consumption in these devices is required to increase their memory density. By fusing both semiconductor and magnetic technologies, this research aims to achieve electric-field-induced magnetization switching. This will open a route to a new magnetization switching scheme, without resorting to the use of magnetic fields or electric currents, that will ensure low-power-consumption information writing technology.