The reason is that in addition to the excellent physical properties of SiC such as wide bandgap and high thermal conductivity, crystal manufacturing technology and device process technology are enriched among next-generation semiconductors.
　This report summarizes the current status and future forecast of the SiC device market, focusing on the automotive, energy, information and telecommunication, and industrial applications, along with the characteristics of SiC as a power device material. In fact, SiC devices are beginning to be put into practical use in automotive applications, but there is still a large gap with Si in terms of cost. In this report, the following policy recommendations are made.
　To further expand the use of SiC power devices, it is necessary to develop low-cost, highly efficient, and highly reliable device manufacturing technologies. For this purpose, it is important to develop SiC single-crystal fabrication technology with large diameter and low defect density, epitaxial film fabrication technology with low defect density and high efficiency, and defect control technology to identify defect structures that affect device characteristics and to clarify and control their formation process and behavior. In addition, in device process technology, significant improvement of MOSFET channel formation technology is also necessary.