LCS-FY2018-PP-07
Issues Regarding the Technological Development of Gallium Oxide as a New Wide Bandgap Semiconductor for Electron Devices Applications
Summary
Gallium oxide (Ga2O3) is a semiconducting material viewed with high expectationsfor applicationsin new fields, including very high voltage power devices, because of its bandgap that is larger than the other industrialized common wide bandgap semiconductors such as gallium nitride and silicon carbide.
Another attractive property of Ga2O3 is its potential for mass production taking account of the recent development of the melt-growth techniques of large single crystals and the epitaxial growth techniques of high-quality thin films. This report is to clarify the technological challenges for a large-scale industrialization of Ga2O3 based on the current statuses of the growth technologies of electron-device-grade-crystals and the performance of the demonstrated electron devices.