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1) |
Satoshi Sugahara and Masaaki Tanaka |
Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: The effect of an ultrathin GaAs buffer layer |
International Conference on Molecular Beam Epitaxy (MBE XII) |
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2) |
菅原聡、田中雅明(東京大学工学系研究科電子工学専攻、科学技術振興事業団さきがけ研究21) |
Exact (111)B GaAs基板上に成長した単結晶MnAs/AlAs/MnAs強磁性トンネル接合 |
2002年秋季 第63回応用物理学会学術講演会 25p-ZA-6. |
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3) |
S. Sugahara1,2, R. Nakane1 and M. Tanaka1,2 1 Department of Electronic Engineering, The University of Tokyo 2 PRESTO, Japan Science and Thechnology Corporation |
Fully epitaxial MnAs/AlAs/MnAs magnetic tunnel junctions grown on GaAs(111)B substrates: The influence of crystallinity on tunneling magnetoresistance |
47th Annual Conference on Magnetism & Magnetic Materials (MMM2002) Tampa, 2002, AA-09. |
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4) |
菅原、李、田中 |
MnAs/AlAs/MnAsエピタキシャル強磁性トンネル接合の結晶性とトンネル磁気抵抗効果 |
第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-28. |
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5) |
松野、菅原、田中 |
スピンフィルタ・トランジスタを用いたリコンフィギャラブル論理回路 |
第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-2. |
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6) |
菅原、田中 |
スピンフィルタ・トランジスタの提案とその応用 |
第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-1. |
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7) |
中根、菅原、田中 |
MnAs/NiAs/MnAs三層構造のエピタキシャル成長と磁気抵抗効果 |
第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-29. |
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8) |
S.Sugahara and M.Tanaka |
Growth Characteristics and Tunneling Magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs(111)B Substrates |
Physica E 13 (2002) 582. |
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9) |
Sugahara and M.Tanaka |
Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on GaAs(111)B Substrates: The Influence of Crystallinity on Tunneling Magnetoresistance |
47th Conf. on Magnetism and Magnetic Materials (MMM'02), Tampa, 2002, AA-09. |
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10) |
S.Sugahara and M.Tanaka |
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer |
2002 Intl. Conf. on Molecular Beam Epitaxy (MBE XII), San Francisco, 2002, TuB3.3. |
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11) |
S.Sugahara, K.L.Lee, T.Matsuno, R.Nakane and M.Tanaka |
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs /AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates:The Effect of an Ultrathin GaAs Buffer Layer |
The 8th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-8), Sendai, 2002, F8. |
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12) |
菅原、田中 |
Exact (111)B GaAs基板上に成長した単結晶MnAs/AlAs/MnAs強磁性トンネル接合 |
第63回応用物理学会学術講演会, 新潟, 2002, 25p-ZA-6. |
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13) |
S.Sugahara and M.Tanaka |
A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain |
to be published in Appl. Phys. Lett. |
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14) |
S.Sugahara and M.Tanaka |
A Spin-Filter Transistor |
to be published in Jpn. J. Appl. Phys. |
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15) |
R.Nakane, S.Sugahara, and M.Tanaka |
The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates |
to be published in J. Appl. Phys. |
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16) |
S.Sugahara and M.Tanaka |
A Novel Spin Transistor Based on Spin-Filtering in Ferromagnetic Barriers: A Spin-Filter Transistor |
to be published in Physica E. |
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17) |
R.Nakane, S.Sugahara and M.Tanaka |
Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates |
to be published in Physica E. |
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18) |
S.Sugahara, K.L.Lee, T.Matsuno, and M.Tanaka |
Epitaxial Growth and Magnetic Properties of Si1-xMnx Thin Films |
2004 MRS Spring Meeting, San Francisco, 2004, G2.5. |
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19) |
S.Sugahara, T.Matsuno and M.Tanaka |
Nonvolatile Memory and Reconfigurable Logic Applications of Spin MOSFETs |
2004 MRS Spring Meeting, San Francisco, 2004, G4.7. |
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20) |
S.Sugahara, K.L.Lee, and M.Tanaka |
Spin MOSFETs for Spintronic Integrated Circuits |
2004 MRS Spring Meeting, San Francisco, 2004, G5.8. |
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21) |
S.Sugahara and M.Tanaka |
A Spin MOSFET Using Half-Metallic Source and Drain |
9th Joint MMM/INTERMAG Conf., Anaheim, 2004, GB-11. |
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22) |
R.Nakane, S.Sugahara and M.Tanaka |
The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates |
9th Joint MMM/INTERMAG Conf., Anaheim, 2004, AE-08. |
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23) |
菅原、田中 |
シリコンをベースとしたスピンエレクトロニクス |
第51回応用物理学関係連合学術講演会, 東京, 2004.[招待講演] |
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24) |
菅原、田中 |
スピンMOSFETとその応用 |
日本応用磁気学会第134研究会/第21回磁性人工構造膜の物性と機能専門研究会,東京, 2004.[招待講演] |
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25) |
菅原、李、田中 |
低温MBEによって成長したMnドープSi薄膜の磁気特性 |
第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-9. |
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26) |
李、菅原、田中 |
Si(001)基板上へのGe1-xMnx薄膜のエピタキシャル成長と磁気特性 |
第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-10. |
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27) |
菅原、田中 |
強磁性金属ソース/ドレインを用いたスピンMOSFET |
第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20. |
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28) |
松野、菅原、田中 |
スピンMOSFETを用いたリコンフィギャラブル論理回路(U) |
第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20. |
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29) |
S.Sugahara and M.Tanaka |
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer |
J. Crystal Growth 251 (2003) 317. |
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30) |
M.Tanaka, Y.Higo and S.Sugahara |
Spin-Polarized Tunneling in Fully Epitaxial Semiconductor-Based Magnetic Tunnel Junctions |
J. Superconductivity: Incorporating Novel Magnetism 16 (2003) 241. |
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31) |
S.Sugahara and M.Tanaka |
A Spin MOSFET Using Half-Metallic-Ferromagnet Contacts for the Source and Drain |
Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P1. |
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32) |
T.Matsuno, S.Sugahara and M.Tanaka |
Design and Analysis of Reconfigurable Logic Gates Using the Spin MOSFET |
Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P2. |
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33) |
S.Sugahara, R. Nakane, K.L. Lee and M.Tanaka |
Magnetic Coupling and Tunneling Magnetoresistance of Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions |
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 053. |
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34) |
S.Sugahara and M.Tanaka |
A Ferromagnetic Schottky Source/Drain MOSFET |
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 089. |
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35) |
T.Matsuno, S.Sugahara and M.Tanaka |
Reconfigurable Logic Gates Based on Spin MOSFET |
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 086. |
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36) |
R.Nakane, S.Sugahara and M.Tanaka |
Magnetic Properties of Fully Epitaxial Metallic MnAs/NiAs/MnAs Trilayers Grown on GaAs(001) Substrates |
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 042. |
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37) |
S.Sugahara and M.Tanaka |
Proposal of a Novel Spin Transistor Based on Spin-Filtering in a Ferromagnetic Barrier Layer: A Spin-Filter Transistor |
The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PC49. |
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38) |
R.Nakane, S.Sugahara and M.Tanaka |
Epitaxial Growth and Magnetic Properties of MnAs/NiAs/MnAs Spin-Valve Trilayers on GaAs(001) Substrates |
The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PB77. |
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39) |
菅原、田中 |
半導体スピンエレクトロニクス最前線 |
日本学術振興会薄膜第131委員会第216回研究会, 仙台, 2003.[招待講演] |
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40) |
菅原、松野、李、田中 |
低温MBEによるSi1-xMnx薄膜のエピタキシャル成長 |
第64回応用物理学会学術講演会, 福岡, 2003, 2a-ZL-3. |
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41) |
菅原、田中 |
ハーフメタル・ソース/ドレインを用いたスピンMOSFETの理論解析 |
第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-15. |
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42) |
松野、菅原、田中 |
スピンMOSFETを用いたリコンフィギャラブル論理回路 |
第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-16. |
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43) |
中根、菅原、田中 |
エピタキシャルMnAs薄膜の熱処理による結晶性と磁気特性の改善 |
第64回応用物理学会学術講演会, 福岡, 2003, 1a-ZL-8. |
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44) |
S.Sugahara and M.Tanaka |
A Spin MOSFET with Half-Metallic Source/Drain and Its Nonvolatile Memory Applications |
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D5. |
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45) |
S.Sugahara and M.Tanaka |
Proposal and Theoretical Analysis of a Spin-Filter Transistor |
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, PB24. |
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46) |
T.Matsuno, S.Sugahara and M.Tanaka |
Reconfigurable Logic Gates for Two-Input Symmetric Boolean Functions Based on the Spin MOSFET |
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D6. |
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47) |
R.Nakane, S.Sugahara and M.Tanaka |
Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates |
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, PB22. |
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