back to TOP
Research Reports TOP
Phase 1 (1期生) Phase 2 (2期生) Phase 3 (3期生)
4、Ferromagnet/semiconductor hybrid devices using fully epitaxial ferromagnetic tunnel junctions
<BACK> <NEXT>
Satoshi Sugahara
1) Satoshi Sugahara and Masaaki Tanaka
Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: The effect of an ultrathin GaAs buffer layer
International Conference on Molecular Beam Epitaxy (MBE XII)
 
   
2) 菅原聡、田中雅明(東京大学工学系研究科電子工学専攻、科学技術振興事業団さきがけ研究21)
Exact (111)B GaAs基板上に成長した単結晶MnAs/AlAs/MnAs強磁性トンネル接合
2002年秋季 第63回応用物理学会学術講演会  25p-ZA-6.
   
3) S. Sugahara1,2, R. Nakane1 and M. Tanaka1,2 1 Department of Electronic Engineering, The University of Tokyo 2 PRESTO, Japan Science and Thechnology Corporation
Fully epitaxial MnAs/AlAs/MnAs magnetic tunnel junctions grown on GaAs(111)B substrates: The influence of crystallinity on tunneling magnetoresistance
47th Annual Conference on Magnetism & Magnetic Materials (MMM2002) Tampa, 2002, AA-09.
   
4) 菅原、李、田中
MnAs/AlAs/MnAsエピタキシャル強磁性トンネル接合の結晶性とトンネル磁気抵抗効果
第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-28.
   
5) 松野、菅原、田中
スピンフィルタ・トランジスタを用いたリコンフィギャラブル論理回路
第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-2.
   
6) 菅原、田中
スピンフィルタ・トランジスタの提案とその応用
第50回応用物理学関係連合講演会, 横浜, 2003, 30a-ZH-1.
   
7) 中根、菅原、田中
MnAs/NiAs/MnAs三層構造のエピタキシャル成長と磁気抵抗効果
第50回応用物理学関係連合講演会, 横浜, 2003, 27p-W-29.
   
8) S.Sugahara and M.Tanaka
Growth Characteristics and Tunneling Magnetoresistance of MnAs/AlAs/MnAs Trilayer Heterostructures Grown on Vicinal GaAs(111)B Substrates
Physica E 13 (2002) 582.
   
9) Sugahara and M.Tanaka
Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions Grown on GaAs(111)B Substrates: The Influence of Crystallinity on Tunneling Magnetoresistance
47th Conf. on Magnetism and Magnetic Materials (MMM'02), Tampa, 2002, AA-09.
   
10) S.Sugahara and M.Tanaka
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer
2002 Intl. Conf. on Molecular Beam Epitaxy (MBE XII), San Francisco, 2002, TuB3.3.
   
11) S.Sugahara, K.L.Lee, T.Matsuno, R.Nakane and M.Tanaka
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs /AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates:The Effect of an Ultrathin GaAs Buffer Layer
The 8th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-8), Sendai, 2002, F8.
   
12) 菅原、田中
Exact (111)B GaAs基板上に成長した単結晶MnAs/AlAs/MnAs強磁性トンネル接合
第63回応用物理学会学術講演会, 新潟, 2002, 25p-ZA-6.
   
13) S.Sugahara and M.Tanaka
A Spin Metal-Oxide-Semiconductor Field-effect Transistor Using Half-Metallic-Ferromagnet Contacts for the Source and Drain
to be published in Appl. Phys. Lett.
   
14) S.Sugahara and M.Tanaka
A Spin-Filter Transistor
to be published in Jpn. J. Appl. Phys.
   
15) R.Nakane, S.Sugahara, and M.Tanaka
The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates
to be published in J. Appl. Phys.
   
16) S.Sugahara and M.Tanaka
A Novel Spin Transistor Based on Spin-Filtering in Ferromagnetic Barriers: A Spin-Filter Transistor
to be published in Physica E.
   
17) R.Nakane, S.Sugahara and M.Tanaka
Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates
to be published in Physica E.
   
18) S.Sugahara, K.L.Lee, T.Matsuno, and M.Tanaka
Epitaxial Growth and Magnetic Properties of Si1-xMnx Thin Films
2004 MRS Spring Meeting, San Francisco, 2004, G2.5.
   
19) S.Sugahara, T.Matsuno and M.Tanaka
Nonvolatile Memory and Reconfigurable Logic Applications of Spin MOSFETs
2004 MRS Spring Meeting, San Francisco, 2004, G4.7.
   
20) S.Sugahara, K.L.Lee, and M.Tanaka
Spin MOSFETs for Spintronic Integrated Circuits
2004 MRS Spring Meeting, San Francisco, 2004, G5.8.
   
21) S.Sugahara and M.Tanaka
A Spin MOSFET Using Half-Metallic Source and Drain
9th Joint MMM/INTERMAG Conf., Anaheim, 2004, GB-11.
   
22) R.Nakane, S.Sugahara and M.Tanaka
The Effect of Post-Growth Annealing on the Morphology and Magnetic Properties of MnAs Thin Films Grown on GaAs(001) Substrates
9th Joint MMM/INTERMAG Conf., Anaheim, 2004, AE-08.
   
23) 菅原、田中
シリコンをベースとしたスピンエレクトロニクス
第51回応用物理学関係連合学術講演会, 東京, 2004.[招待講演]
   
24) 菅原、田中
スピンMOSFETとその応用
日本応用磁気学会第134研究会/第21回磁性人工構造膜の物性と機能専門研究会,東京, 2004.[招待講演]
   
25) 菅原、李、田中
低温MBEによって成長したMnドープSi薄膜の磁気特性
第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-9.
   
26) 李、菅原、田中
Si(001)基板上へのGe1-xMnx薄膜のエピタキシャル成長と磁気特性
第51回応用物理学関係連合学術講演会, 東京, 2004, 29a-ZK-10.
   
27) 菅原、田中
強磁性金属ソース/ドレインを用いたスピンMOSFET
第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20.
   
28) 松野、菅原、田中
スピンMOSFETを用いたリコンフィギャラブル論理回路(U)
第51回応用物理学関係連合学術講演会, 東京, 2004, 30a-ZK-20.
   
29) S.Sugahara and M.Tanaka
Epitaxial Growth and Magnetic Properties of Single-Crystal MnAs/AlAs/ MnAs Magnetic Tunnel Junctions on Exact (111)B GaAs Substrates: The Effect of an Ultrathin GaAs Buffer Layer
J. Crystal Growth 251 (2003) 317.
   
30) M.Tanaka, Y.Higo and S.Sugahara
Spin-Polarized Tunneling in Fully Epitaxial Semiconductor-Based Magnetic Tunnel Junctions
J. Superconductivity: Incorporating Novel Magnetism 16 (2003) 241.
   
31) S.Sugahara and M.Tanaka
A Spin MOSFET Using Half-Metallic-Ferromagnet Contacts for the Source and Drain
Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P1.
   
32) T.Matsuno, S.Sugahara and M.Tanaka
Design and Analysis of Reconfigurable Logic Gates Using the Spin MOSFET
Intl. Workshop on Nano-Scale Magnetoelectronics, Nagoya, 2003, P2.
   
33) S.Sugahara, R. Nakane, K.L. Lee and M.Tanaka
Magnetic Coupling and Tunneling Magnetoresistance of Fully Epitaxial MnAs/AlAs/MnAs Ferromagnetic Tunnel Junctions
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 053.
   
34) S.Sugahara and M.Tanaka
A Ferromagnetic Schottky Source/Drain MOSFET
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 089.
   
35) T.Matsuno, S.Sugahara and M.Tanaka
Reconfigurable Logic Gates Based on Spin MOSFET
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 086.
   
36) R.Nakane, S.Sugahara and M.Tanaka
Magnetic Properties of Fully Epitaxial Metallic MnAs/NiAs/MnAs Trilayers Grown on GaAs(001) Substrates
Intl. Conf. and School Semiconductor spintronics and Quantum Information Technology (Spintech II), Brugge, 2003, 042.
   
37) S.Sugahara and M.Tanaka
Proposal of a Novel Spin Transistor Based on Spin-Filtering in a Ferromagnetic Barrier Layer: A Spin-Filter Transistor
The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PC49.
   
38) R.Nakane, S.Sugahara and M.Tanaka
Epitaxial Growth and Magnetic Properties of MnAs/NiAs/MnAs Spin-Valve Trilayers on GaAs(001) Substrates
The 11th Intl. Conf. on Modulated Semiconductor Structures (MSS11), Nara, 2003, PB77.
   
39) 菅原、田中
半導体スピンエレクトロニクス最前線
日本学術振興会薄膜第131委員会第216回研究会, 仙台, 2003.[招待講演]
   
40) 菅原、松野、李、田中
低温MBEによるSi1-xMnx薄膜のエピタキシャル成長
第64回応用物理学会学術講演会, 福岡, 2003, 2a-ZL-3.
   
41) 菅原、田中
ハーフメタル・ソース/ドレインを用いたスピンMOSFETの理論解析
第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-15.
   
42) 松野、菅原、田中
スピンMOSFETを用いたリコンフィギャラブル論理回路
第64回応用物理学会学術講演会, 福岡, 2003, 30p-H-16.
   
43) 中根、菅原、田中
エピタキシャルMnAs薄膜の熱処理による結晶性と磁気特性の改善
第64回応用物理学会学術講演会, 福岡, 2003, 1a-ZL-8.
   
44) S.Sugahara and M.Tanaka
A Spin MOSFET with Half-Metallic Source/Drain and Its Nonvolatile Memory Applications
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D5.
   
45) S.Sugahara and M.Tanaka
Proposal and Theoretical Analysis of a Spin-Filter Transistor
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, PB24.
   
46) T.Matsuno, S.Sugahara and M.Tanaka
Reconfigurable Logic Gates for Two-Input Symmetric Boolean Functions Based on the Spin MOSFET
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, D6.
   
47) R.Nakane, S.Sugahara and M.Tanaka
Growth and Magnetoresistance of Epitaxial Metallic MnAs/NiAs/MnAs Trilayers on GaAs(001) Substrates
The 9th Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-9), Tokyo, 2003, PB22.
   
※「PhaseT」= 2001〜2004 researcher
※「PhaseU」= 2002〜2005 researcher
※「PhaseV」= 2003〜2006 researcher
 
Copyright(C)2002-2007 JST All Rights Reserved.